Copper Conductive Elements in Resistivity Changing Memory
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Solution Overview
Problem
High temperature annealing processes in solid electrolyte memory device fabrication can cause mechanical stress, leading to delamination of the solid electrolyte layer and unstable contact performance, particularly with conductive elements like aluminum or tungsten.
Innovation Solution
Incorporating copper as the primary material for conductive elements during the back end of line fabrication, which eliminates the need for high temperature annealing and enhances contact performance by using copper for wiring layers, plugs, and vias, with a low temperature annealing process below 350°C.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If high temperature annealing process is used for fabricating solid electrolyte memory device, then conductive elements can be formed, but mechanical stress causes delamination of solid electrolyte layer and unstable contact performance
Solution Approach 1:
The patent changes the material parameter of conductive elements from traditional metals (aluminum, tungsten) to copper, which has different thermal and mechanical properties. This parameter change allows the formation of conductive elements without high temperature annealing, reducing thermal stress and preventing delamination while maintaining reliable contact performance.
2Reliability
If high temperature annealing is applied to form conductive elements, then electrical conductivity is achieved, but solid electrolyte layer delaminates due to mechanical stress
Solution Approach 1:
The patent changes the material composition parameter to copper-based conductive elements that achieve adequate electrical conductivity without requiring high temperature annealing processes. This eliminates the thermal-mechanical stress that causes delamination, preserving the integrity of the solid electrolyte layer while maintaining necessary electrical conductivity.
3Ease of manufacture
If traditional conductive elements (aluminum or tungsten) are used, then manufacturing process is established, but contact performance becomes unstable due to high temperature annealing requirements
Solution Approach 1:
The patent changes the material parameter from traditional aluminum or tungsten to copper, which fundamentally alters the processing requirements. Copper conductive elements can be formed without high temperature annealing, eliminating the source of mechanical stress and contact performance instability while establishing a new, more reliable manufacturing process.
Data Source
AI summary
According to one embodiment of the present invention, an integrated circuit includes a plurality of resistivity changing memory cells, and a plurality of conductive elements being electrically connected to the resistivity changing memory cells, at least some of the conductive elements comprising copper.