Copper Deep Trench Isolation for NIR Crosstalk Reduction
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Solution Overview
Problem
Semiconductor devices face challenges with crosstalk between components, particularly in detecting near-infrared (NIR) radiation, due to inefficient radiation reflection and absorption, which affects image resolution and sensitivity.
Innovation Solution
A semiconductor device with a deep trench isolation (DTI) structure that includes a barrier, dielectric, and copper layers, where the dielectric is between the barrier and copper, and the barrier is between the substrate and dielectric, is laterally offset from photodiodes to enhance radiation reflection and reduce crosstalk.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If a DTI structure with copper is used to reflect radiation, then radiation reflection is improved, but device complexity increases
Solution Approach 1:
The DTI structure is segmented into three distinct functional layers: a barrier layer (preventing copper diffusion), a dielectric layer (提供机械支撑和电绝缘), and a copper layer (提供高反射率). This segmentation allows each layer to be optimized independently while working together to achieve superior radiation reflection without excessive complexity
Solution Approach 2:
The invention uses a composite structure combining three different materials (barrier material, dielectric material, and copper) to achieve properties that single materials cannot provide alone. The composite DTI structure leverages the high reflectivity of copper while using the barrier and dielectric layers to provide structural integrity and prevent material degradation
2Measurement precision
If DTI structures are added to reduce crosstalk, then measurement precision is improved, but manufacturing precision requirements increase
Solution Approach 1:
The barrier layer is formed first to prevent copper diffusion into the substrate during subsequent copper deposition. This preliminary protective action ensures that even if manufacturing tolerances vary, the copper will not contaminate the substrate, thereby maintaining detection precision without requiring extremely tight manufacturing controls
Solution Approach 2:
The dielectric layer acts as an intermediary between the barrier layer and the copper layer, providing mechanical support and stress relief. This intermediary layer accommodates thermal expansion differences and prevents cracking, allowing the structure to tolerate normal manufacturing variations while maintaining its radiation-reflecting function
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The DTI structure with copper significantly reduces crosstalk between components, improving the detection and resolution of NIR radiation by reflecting more radiation back towards the photodiodes, leading to enhanced image generation and sensitivity.
Implementation Method 1
The DTI structure reflects an increased amount of radiation, such as near-infrared (NIR) radiation, traveling away from the first component back towards the first component
Data Source
AI summary
A semiconductor device is provided. The semiconductor device includes a first deep trench isolation (DTI) structure within a substrate. The first DTI structure includes a barrier structure, a dielectric structure, and a copper structure. The dielectric structure is between the barrier structure and the copper structure. The barrier structure is between the substrate and the dielectric structure.