Copper Switching Element Layout for Low-Voltage Resistive Switching
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Solution Overview
Problem
The existing methods for manufacturing switching elements result in residue from the etched barrier insulation layer remaining on the lower electrode, leading to increased switching voltage and leakage current due to oxygen plasma's high physical energy affecting the Low-k layer and electrode adhesion, causing electric field concentration and reduced dielectric breakdown voltage.
Innovation Solution
A switching element design incorporating a copper wire embedded in a first insulation layer with an oxygen supply layer that generates low-energy oxygen plasma for residue removal, forming an ion conducting layer on exposed surfaces, and a second electrode on the ion conducting layer, reducing residue and plasma impact on the Low-k layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If oxygen plasma is used to remove residue from the lower electrode, then residue removal is improved, but the Low-k layer is damaged and dielectric breakdown voltage is reduced due to high physical energy
Solution Approach 1:
A barrier insulation layer is introduced as an intermediary between the lower electrode and the Low-k layer. This barrier layer absorbs the high physical energy of the oxygen plasma during residue removal, preventing direct damage to the Low-k layer while still allowing effective residue cleanup on the lower electrode surface
Solution Approach 2:
The barrier insulation layer is formed in advance before the oxygen plasma treatment step. This pre-positioned protective layer cushions the Low-k layer against potential plasma damage, ensuring that subsequent high-energy plasma processing does not compromise the dielectric integrity of the Low-k layer
2Manufacturing precision
If oxygen plasma is used for residue removal, then residue is reduced, but oxidation increases leading to higher switching voltage and leakage current
Solution Approach 1:
The barrier insulation layer serves as a protective intermediary that limits the extent of oxidation during plasma treatment. It allows controlled residue removal while preventing excessive oxidation of the lower electrode that would otherwise increase switching voltage and leakage current
Solution Approach 2:
The oxygen plasma treatment is localized to specific regions where residue removal is needed, rather than applying uniform plasma across the entire structure. This localized approach, combined with the barrier layer protection, achieves effective residue removal while minimizing unnecessary oxidation in other areas
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces switching voltage and leakage current, enhances reliability, and maintains low electric power consumption by minimizing electric field concentration and oxidation, resulting in a more reliable and efficient switching element.
Implementation Method 1
an oxygen supply layer that is formed at an upper surface of the second insulation layer, and that generates oxygen plasma at a time of etching that forms the opening in the second insulation layer
Implementation Method 2
a variable resistance element having a variable resistance film, a first electrode that is disposed as a wire on one surface of the variable resistance film
Data Source
AI summary
A switching element that has reduced switching voltage and leakage current and that demonstrates high reliability and low power consumption is achieved as a result of comprising: a first insulation layer in which first wiring mainly consisting of copper is embedded in a first wiring groove that opens upward; a second insulation layer which is formed on an upper surface of the first insulation layer and the first wiring and has an opening that reaches the first insulation layer and the first wiring; a first electrode which is the portion of the first wiring that is exposed from the opening; an oxygen supply layer which is formed on an upper surface of the second insulation layer, generates oxygen plasma during etching to form the opening in the second insulation layer, and remains at least in the vicinity of the opening of the upper surface of the second insulation layer; an ion conducting layer which is formed on the upper surface of the first insulation layer and the first electrode that are exposed from the opening, an inner surface of the opening of the second insulation layer, and an upper surface of the oxygen supply layer; and a second electrode that is formed on an upper surface of the ion conducting layer.