Copper TFT Array Substrates With Antioxidant Adhesion Layer
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Solution Overview
Problem
The poor interfacial adhesion between silicon oxide compounds and copper metal in thin film transistor devices leads to a protective layer that is prone to cracking and falling off, resulting in high production costs and defective products in display panels.
Innovation Solution
A metal laminated layer with an antioxidant protective layer is introduced between the semiconductor layer and the protective layer, where the antioxidant protective layer is formed through plasma treatment with hydrogen or ammonia, improving adhesion and preventing oxidation of copper during silicon oxide deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If silicon oxide compound is used as the protective layer of oxide semiconductor TFT, then the protective layer can be formed, but the interface adhesion between silicon oxide compound and copper metal is poor, causing the protective layer to crack and fall off
Solution Approach 1:
An antioxidant protective layer is introduced as an intermediary between the copper metal layer and the silicon oxide protective layer. This intermediate layer prevents direct contact between silicon oxide and copper metal, eliminating the oxidation reaction that causes poor adhesion. The antioxidant layer acts as a mediator that resolves the harmful interaction between the two materials.
Solution Approach 2:
The antioxidant protective layer is formed on the copper metal layer before the silicon oxide protective layer is deposited. This preliminary protective action prevents oxidation of the copper surface that would otherwise occur during subsequent processing steps, ensuring good adhesion between the copper and the silicon oxide layer.
2Reliability
If copper metal is used in the metal laminated layer, then high conductivity is achieved, but oxidation during silicon oxide deposition causes poor adhesion and defective products
Solution Approach 1:
The antioxidant protective layer creates an inert environment for the copper metal layer by preventing oxygen from reaching the copper surface during the silicon oxide deposition process. This protective atmosphere maintains the copper in its metallic state, preserving its high conductivity while preventing oxidation.
Solution Approach 2:
The antioxidant protective layer serves as a barrier that mediates between the oxygen-containing environment (necessary for silicon oxide deposition) and the copper metal (which must remain oxidized-free for good adhesion and conductivity). This intermediate layer allows the deposition process to proceed while protecting the copper.
3Reliability
If plasma treatment with hydrogen or ammonia is performed on the metal laminated layer, then adhesion between copper and silicon oxide is improved, but additional process steps are required
Solution Approach 1:
The antioxidant protective layer formation is merged with the existing metal laminated layer fabrication process. By forming the antioxidant layer as part of the metal layer deposition sequence, the solution integrates multiple functions (conduction and adhesion protection) into a unified structure, reducing overall process complexity despite the additional plasma treatment step.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances the interfacial adhesion between copper and silicon oxide, reducing the likelihood of the protective layer peeling off and increasing production yield while lowering costs by stabilizing the metal oxide thin film transistor devices.
Implementation Method 1
A plasma treatment is performed on a surface of the metal laminated layer to form an antioxidant protective layer on the surface of the laminated metal layer
Data Source
AI summary
An array substrate, a manufacturing method thereof, and a display panel are provided. The array substrate includes a substrate, a gate layer, a gate insulating layer, a semiconductor layer, a source and drain layer, and a protective layer stacked in sequence. The source and drain layer includes a metal laminated layer and an antioxidant protective layer. The metal laminated layer is disposed on the semiconductor layer. The antioxidant protective layer is disposed between the metal laminated layer and the protective layer.