L-Shaped Dielectric Corner Spoiler for PECVD Film Uniformity
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Solution Overview
Problem
Conventional PECVD techniques face challenges in achieving uniform film thickness and deposition rate control, particularly at the corner regions of large substrates, leading to 'corner peaks' that affect processing parameters like film thickness and edge exclusion.
Innovation Solution
A corner spoiler with an L-shaped body made from a dielectric material is used to alter plasma distribution and gas flow at the substrate's corners, reducing the electric field and deposition rate, thereby improving film uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional PECVD techniques are used with standard gas distribution, then the processing is simple and cost-effective, but the film thickness uniformity deteriorates due to corner peaks
Solution Approach 1:
The patent applies local quality by placing corner spoilers specifically at the corner regions of the substrate holder, rather than uniformly across the entire chamber. These localized modifications create region-specific plasma distribution changes that target the corner peak problem without affecting other areas, thereby improving film thickness uniformity with minimal added complexity
Solution Approach 2:
The corner spoilers act as intermediary elements between the gas distribution system and the substrate. Made from dielectric material, they mediate the plasma-gas interaction at corner regions, modifying the local electric field and gas flow patterns to reduce deposition rates and eliminate corner peaks while maintaining overall system simplicity
2Manufacturing precision
If gas flow modulation through the distribution plate is used to control deposition rate, then the deposition rate can be controlled, but the film uniformity profile can only be changed at a larger range greater than 300 mm from the corner
Solution Approach 1:
The patent segments the gas distribution control into two distinct components: the main distribution plate for overall gas flow control and the corner spoilers for localized corner region control. This segmentation allows independent optimization of each component, enabling precise control of corner region deposition rates without affecting the broader processing parameters, thereby achieving both improved corner uniformity and maintained ease of operation
3Area of stationary object
If the substrate size is increased to meet display industry requirements, then the display area increases, but the film thickness control and uniformity deteriorate
Solution Approach 1:
The corner spoilers provide localized modification of plasma and gas flow characteristics at corner regions, addressing the specific uniformity problems that arise with large substrate processing. By targeting only the corner areas where non-uniformity occurs, the system maintains effective film thickness control across the entire large substrate area without requiring complete redesign of the gas distribution system
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The corner spoiler effectively reduces deposition rates by 3% at corner regions and improves diagonal uniformity, achieving edge exclusion of 30 mm or less, while maintaining overall film integrity and reducing the average electric field strength by 50%.
Implementation Method 1
designed to decrease high deposition rates on corner regions and/or edge regions of substrates by changing the gas flow
Implementation Method 2
reducing the electric field and deposition rate, thereby improving film uniformity
Implementation Method 3
alter plasma distribution and gas flow at the substrate's corners
Implementation Method 4
decrease high deposition rates on corner regions and/or edge regions of substrates
Data Source
AI summary
The present disclosure relates to a corner spoiler designed to decrease high deposition rates on corner regions of substrates by changing the gas flow. In one embodiment, a corner spoiler for a processing chamber includes an L-shaped body fabricated from a dielectric material, wherein the L-shaped body is configured to change plasma distribution at a corner of a substrate in the processing chamber. The L-shaped body includes a first and second leg, wherein the first and second legs meet at an inside corner of the L-shaped body. The length of the first or second leg is twice the distance defined between the first or second leg and the inside corner. In another embodiment, a shadow frame for a depositing chamber includes a rectangular shaped body having a rectangular opening therethrough, and one or more corner spoilers coupled to the rectangular shaped body at corners of the rectangular shaped body.