Electric Discharge Tubes TRIZ Cases

Offset female pins and centering rings prevent arcing and vibration disconnection in humid water purifiers.

An electrical adapter uses a button to release stored mechanical energy for automatic connector plug ejection.

Motorized actuation adjusts the magnet bar position in a rotary target cathode to compensate for target erosion and maintain stable sputtering process.

A vaporized solvent dry strip process removes photoresist and residue from semiconductor workpieces using plasma-generated radicals.

A rotatable disk with a slot-shaped opening guides an electron beam generator within chamber housing dimensions.

Dielectric L-shaped corner spoilers reduce electric field strength by 50% to eliminate corner peaks and improve diagonal film uniformity.

Controlling {100} plane orientation in a tantalum sputtering target lowers deposition rates, maintaining film thickness uniformity under high-power conditions.

Micro-compensators correct aberrations in parallel beamlets, maintaining spatial resolution while boosting throughput.

Alternating organic compounds form a protective film that suppresses etching and prevents substrate damage.

A porous carrier retains molten metal via capillary action, preventing arc chamber contamination while doubling aluminum concentration in the ion beam.

A substrate processing chamber uses a rotatable magnet assembly to confine plasma and enhance deposition rates.

A substrate support unit uses a ground line switch to manage high-frequency power application during plasma processing.

Local plasma generation in exhaust gases enables quick endpoint detection, resolving sluggish response issues at high pressures.

Controller regulates process container temperature via plasma generation to eliminate dummy substrate pre-processing steps.

A photocathode electron microscope uses spatial phase modulation to shape excitation light for rapid illumination mode switching.

Recessed cryo-shutter apertures trap water vapor via local cooling, reducing ice contamination during focused ion beam milling.

Aperture array deflects beams via electrode control circuits to provide variable exposure duration resolution, addressing miniaturization constraints.

Electrode extensions on a stripline resonant ring create a spatially-uniform electric field to increase plasma density and vacuum ultraviolet light output.

Aperture uses scattering and absorbing layers to inspect beams in parallel, reducing sequential scanning time.

A projected plasma source uses a field projection portion to transmit an ionizing electromagnetic field into a processing chamber.

Inductively coupled plasma etches deep features into silicon dioxide with vertical sidewalls, overcoming shallow etch limits.

Retaining slots in insulators constrain contact portions to prevent post destruction during thickness sway.

A substrate undercut collects redeposited particles to prevent image obscuration and enhance 3D reconstruction accuracy.

Gap measurement unit detects substrate position relative to dielectric plate, preventing transfer robot collisions with lift pins or substrates.

A plasma shielding unit directs reaction gas to specific substrate regions within a single chamber.

A smart subfield method maintains consistent electron beam exposure across pattern layers in e-beam lithography systems.

Segmented gas box exhaust pathways reduce airflow resistance, lowering energy consumption and scrubber size requirements.

Applying 30 to 300 MHz signals enhances silicon nitride film density and deposition rate beyond conventional RF limits.

Elevating substrate temperature during ion beam deposition enhances crystallinity, reducing wiring resistance in semiconductor devices.

Alternating hydrogen and oxygen plasmas strip boron-carbon films without damaging dielectric layers.

A scanning microscope uses a guide pixel set to identify regions of interest and perform targeted high-resolution scans.

Germicidal UV light sources sterilize container interiors without toxic chemical residues.

Multiple gas lines in a buffer unit adjust pressure to resolve cleaning mode adaptability versus device complexity.

A composite getter system uses a polyimide coating to protect non-evaporable getter materials from environmental degradation.

A gas distributor spatially separates process gas from surface treatment gas within a single chamber lid to manage thin film deposition.

A platen ground pin uses a fluid channel to equalize pressure between substrate regions and the platen cavity.

A lighting adaptor employs a movable push-out part to block power supply mounting parts, preventing electric shock from user misoperation.

A scanning electrode device deflects an ion beam horizontally while beam transport correction electrodes manage vertical trajectory alignment.

Higher modulus support member maintains adhesive layer uniformity, suppressing temperature variations on the substrate adsorption face.

A plasma processing annular member uses pressure gradients to generate rotational driving force and vertical lift without mechanical contact.

Pulsed RF bias power creates round bottom recess channels in silicon, reducing manufacturing steps and costs while improving profile control.

Segmented hollow electrodes enable uniform interior plasma treatment, preventing medicament adhesion and reducing processing time.

Opposing cathode rotation cancels centrifugal forces to resolve the contradiction between high deposition rates and layer homogeneity.

Single-chamber sequential deposition of alternating dielectric and metal layers reduces wafer handling time while preventing cross-contamination.

Heating the supply pipe prevents particle deposition from cleaning gas plasma, maintaining reliability.

Nitrogen or hydrogen plasma etches non-silicon domains to prevent sidewall bowing and feature collapse in high aspect ratio structures.

Manufacturing method forms fixed emission sites via metal-gas reactions on needle tips, enabling high brightness operation in poorer vacuum conditions.

Out-of-phase pulsed gas injection synchronizes inner and outer zone flows to deliver consistent etching across semiconductor substrates.

Vacuum carriers transport etched focus rings via negative pressure, reducing replacement frequency and simplifying semiconductor logistics.