Projected Plasma Source for Controlled Radical Generation

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Solution Overview

Problem

High-energy plasma generated within processing chambers can cause unwanted etching or deposition, and remote plasma sources face challenges in maintaining ideal radical density and mixture due to decay during transport to the chamber.

Innovation Solution

A plasma source system that includes a field generation portion to create an ionizing electromagnetic field, a field projection portion to attenuate this field, and a receiving portion to sustain a low-energy plasma, allowing for controlled plasma generation and radical formation within the processing chamber without the high-energy issues of traditional methods.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If high voltage plasma is generated within the processing chamber, then plasma processing effectiveness is improved, but unwanted etching and deposition occur due to high energy ion bombardment

Engineering Contradiction:

Improveplasma processing effectivenessVSAvoidunwanted etching and deposition

Core Design Contradiction:

ProductivityVSObject-affected harmful factors

Solution Approach 1:

The system divides the plasma generation function into two separate components: a remote plasma source that generates high-energy plasma outside the processing chamber, and a field projection portion that transmits only the necessary electromagnetic field into the chamber. This segmentation allows the harmful high-energy ions to be confined to the remote source while transmitting only the beneficial electromagnetic field components into the processing chamber.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The harmful high-energy ions are extracted and isolated in the remote plasma source chamber, separated from the processing chamber. Only the necessary ionizing electromagnetic field is transmitted through the field projection portion into the processing chamber, leaving the damaging high-energy ion bombardment behind in the remote source.

Inventive Principle:

Principle #2Taking out (Extraction)

2Object-affected harmful factors

If remote plasma sources are used to avoid high ion energy, then unwanted etching is reduced, but radical density and mixture quality deteriorate due to decay during transport

Engineering Contradiction:

Improveunwanted etchingVSAvoidradical density

Core Design Contradiction:

Object-affected harmful factorsVSQuantity of substance

Solution Approach 1:

The field projection portion acts as an intermediary medium that transmits the ionizing electromagnetic field from the remote plasma source to the processing chamber. This intermediary allows the electromagnetic field to pass through while blocking or attenuating the transport of high-energy ions and degraded radical species, maintaining radical quality without requiring direct physical transport.

Inventive Principle:

Principle #24Intermediary (Mediator)

3Productivity

If high frequency plasma sources are used to improve processing efficiency, then productivity increases, but chamber durability decreases due to high energy damage

Engineering Contradiction:

Improveprocessing efficiencyVSAvoidchamber durability

Core Design Contradiction:

ProductivityVSDuration of action of stationary object

Solution Approach 1:

The high-frequency plasma generation is extracted and relocated to a remote source chamber, separating the high-frequency electromagnetic field generation from the processing chamber. This allows high-frequency processing to continue with improved efficiency while the processing chamber is protected from the damaging effects of high-frequency high-energy plasma.

Inventive Principle:

Principle #2Taking out (Extraction)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the generation of a low-ion-energy plasma within the processing chamber, reducing unwanted etching and deposition while maintaining effective radical formation for cleaning and etching applications, and allows the use of low-frequency chambers with high-frequency plasma sources, enhancing processing efficiency and chamber durability.

Implementation Method 1

a field generation portion that generates an ionizing electromagnetic field that extends into a field projection portion

Methodology Applied

Scientific EffectIonizing electromagnetic field generation: Electromagnetic Induction

Implementation Method 2

a field projection portion that attenuates the ionizing electromagnetic field to form an attenuated ionizing electromagnetic field with sufficient energy to sustain a plasma

Methodology Applied

Scientific EffectElectromagnetic field attenuation: Absorption (EM radiation)

Implementation Method 3

a receiving portion that receives the attenuated ionizing electromagnetic field and sustains a plasma with the attenuated ionizing electromagnetic field

Methodology Applied

Scientific EffectPlasma sustention through electromagnetic field: Plasma

Data Source

PatentUS10225919B2Projected plasma source

Publication Date: 2019.03.05 AES GLOBAL HLDG PTE LTD

AI summary

This disclosure describes systems, methods, and apparatuses for generating an ionizing electromagnetic field via a remote plasma source such that the field controllably extends through a field projection portion where the field attenuates, to a plasma processing portion where the field is attenuated but still strong enough to sustain a plasma. The plasma has a low voltage and RF energy and can be used for a variety of semiconductor and thin film processing operations including chamber cleaning via radical generation, etching, and deposition.