Ion Implantation Scanning Electrode Beam Transport Correction
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Solution Overview
Problem
Ion implantation apparatuses are limited by their categorization into high-current, medium-current, and high-energy categories, leading to compatibility issues and inefficiencies in semiconductor manufacturing, as each category requires distinct configurations, making it difficult to switch between them without compromising production efficiency and incurring additional costs.
Innovation Solution
An ion implantation apparatus with a scanning unit and upstream electrode device that allows for adjustable beam current and energy settings, enabling operation as both a high-current and medium-current apparatus, thereby expanding the energy and dose range without changing the apparatus type, using a scanning electrode device and beam transport correction electrodes to manage the ion beam.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If ion implantation apparatuses are classified into separate categories (high-current, medium-current, high-energy) with distinct configurations, then each category can be optimized for its specific function, but it becomes necessary to own multiple apparatuses for different processing needs, increasing cost and reducing compatibility
Solution Approach 1:
The patent implements a universal ion implantation apparatus that can operate across multiple current categories (high-current and medium-current) by providing a beamline configuration that adapts to different operating modes. The apparatus achieves multi-functionality through adjustable beam extraction parameters and configurable electrode settings, allowing a single device to replace what would traditionally require separate specialized apparatuses for different current ranges
2Adaptability or versatility
If the connection between ion source and power supply is modified to extract ion beams with different current amounts, then the operating range is extended, but the beamline configuration must be significantly changed, compromising compatibility and requiring additional apparatus modifications
Solution Approach 1:
The patent employs dynamic adjustability in the beamline configuration, where electrode potentials, beam extraction parameters, and focusing conditions can be dynamically changed to accommodate different beam current requirements. This dynamic capability allows the same physical beamline to operate effectively across a wide range of current values without requiring structural modifications or reconfiguration of the apparatus
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution allows for a broader range of ion implantation capabilities, improving productivity and reducing the need for multiple apparatuses, as the apparatus can handle both high-current and medium-current operations within the same beamline, enhancing operational efficiency and flexibility in semiconductor manufacturing.
Implementation Method 1
a scanning electrode device that allows a deflecting electric field to act on an ion beam incident along a reference trajectory and scans the ion beam in a horizontal direction perpendicular to the reference trajectory
Implementation Method 2
a pair of beam transport correction electrode provided to face each other in a vertical direction perpendicular to the horizontal direction with the reference trajectory interposed therebetween
Data Source
AI summary
An ion implantation apparatus includes a scanning unit, the scanning unit including a scanning electrode device that allows a deflecting electric field to act on an ion beam incident along a reference trajectory and scans the ion beam in a horizontal direction, and an upstream electrode device provided upstream of the scanning electrode device. The scanning electrode device includes a pair of scanning electrodes provided to face each other in the horizontal direction with the reference trajectory interposed therebetween and a pair of beam transport correction electrodes provided to face each other in a vertical direction perpendicular to the horizontal direction with the reference trajectory interposed therebetween. Each of the pair of beam transport correction electrode includes a beam transport correction inlet electrode body protruding toward the reference trajectory in the vertical direction in the vicinity of an inlet of the scanning electrode device.