Substrate Processing Apparatus Temperature Control Without Dummy Substrates
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current substrate processing methods require pre-processing using dummy substrates, which decreases productivity by increasing the time and resources needed before processing a product lot.
Innovation Solution
A substrate processing apparatus configuration that includes a process container with a plasma generation space and a substrate processing space, a plasma generator, a gas supply system, and a controller to control the temperature of the process container within a target range without using a dummy substrate, allowing for efficient pre-processing execution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If pre-processing is performed using dummy substrates to heat the quartz dome, then the temperature of the process container is stabilized, but productivity decreases due to additional time and resource consumption
Solution Approach 1:
The invention extracts and eliminates the dummy substrate from the pre-processing sequence by using plasma generation directly in the process container to heat the quartz dome, thereby stabilizing temperature without consuming additional time and resources that would reduce productivity
Solution Approach 2:
The plasma generation system serves dual functions: it performs the necessary pre-processing heating of the quartz dome while also being ready for immediate use in actual substrate processing, eliminating the need for separate dummy substrate processing steps
2Productivity
If pre-processing time is reduced by eliminating dummy substrates, then productivity improves, but temperature control stability may be compromised
Solution Approach 1:
The controller monitors the temperature of the process container in real-time and adjusts plasma generation parameters accordingly, providing feedback control that ensures stable temperature maintenance within the target range even with reduced pre-processing time
Solution Approach 2:
The system dynamically changes plasma generation parameters (such as power level, gas flow rate) based on real-time temperature measurements to maintain optimal temperature stability during the shortened pre-processing period
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the time and resources required for pre-processing, thereby improving productivity by eliminating the need for dummy substrates and ensuring consistent temperature control for subsequent processing steps.
Implementation Method 1
a plasma generation space in which a processing gas is plasma-excited
Implementation Method 2
a plasma generator including a coil arranged to surround the plasma generation space and provided to be wound around an outer periphery of the process container, and a high-frequency power source that supplies high-frequency power to the coil
Implementation Method 3
at least one of a temperature sensor provided outside the at least one of the process container and configured to detect a temperature of the at least one of the process container
Implementation Method 4
a controller configured to perform a control to cause the temperature of the at least one of the process container detected by the at least one of the temperature sensor to fall within a range of a target temperature defined by a preset upper limit value and a preset lower limit value
Data Source
AI summary
A processing container including a plasma generation space in which a processing gas is plasma-excited and a substrate processing space communicating with the plasma generation space; a plasma generator including a coil arranged to surround the plasma generation space and provided to be wound around an outer periphery of the processing container, and a high-frequency power source that supplies high-frequency power to the coil; a gas supply section that supplies the processing gas to the plasma generation space; a temperature sensor provided outside the processing container and configured to detect a temperature of the processing container; and a controller configured to perform control to cause the temperature of the processing container detected by the temperature sensor to fall within a range of a target temperature defined by a preset upper limit value and a preset lower limit value, prior to execution of a process recipe for processing a substrate.