Tantalum Sputtering Target Crystal Orientation Control
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Solution Overview
Problem
High-power sputtering conditions lead to uncontrollable film thickness uniformity, particularly in forming ultra-thin films on micro wiring patterns with large aspect ratios, due to excessively high deposition rates.
Innovation Solution
The structural orientation of a tantalum sputtering target is controlled through a specific rolling method, reducing the deposition rate and achieving superior film thickness uniformity by adjusting the {100} and {111} plane orientations, with a {100} plane orientation ratio of 30% or more and a {100}/{111} ratio of 1.5 or higher.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high-power sputtering is used to increase deposition rate, then productivity is improved, but film thickness uniformity deteriorates
Solution Approach 1:
The invention changes the crystallographic orientation parameters of the tantalum target by controlling the rolling reduction ratio (50-80%) and annealing temperature (500-700°C), which modifies the sputtering rate characteristics. This allows the use of high-power sputtering while maintaining controllable deposition rates and uniform film thickness, resolving the contradiction between productivity and manufacturing precision.
2Manufacturing precision
If conventional rolling and annealing are performed to obtain fine uniform crystal grains, then manufacturing precision is improved, but deposition rate control under high-power sputtering deteriorates
Solution Approach 1:
The invention optimizes the parameters of rolling reduction ratio (50-80%) and annealing temperature (500-700°C) to achieve a specific crystal grain structure with controlled orientation. This produces a target that maintains fine uniform crystal grains while exhibiting reduced sputtering rate under high-power conditions, thereby improving deposition rate control without sacrificing manufacturing precision.
Solution Approach 2:
The invention creates a composite microstructure within the tantalum target by combining fine crystal grains with specific orientation distribution. This microstructural composition enables the target to exhibit both uniformity for precision manufacturing and controlled sputtering characteristics for productivity enhancement.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the formation of thin films with improved thickness uniformity and controlled deposition rates, even under high-power sputtering conditions, effectively addressing the challenge of uniformity in micro wiring patterns.
Implementation Method 1
when a direction normal to a rolling surface (ND) is observed via an electron backscatter diffraction pattern method (EBSP method), an area ratio of crystal grains of which a {100} plane is oriented in the ND
Implementation Method 2
The sputtering method for forming films from metals, ceramics and other materials has been used in numerous fields
Data Source
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AI summary
Provided is a tantalum target, wherein, when a direction normal to a rolling surface (ND), which is a cross section perpendicular to a sputtering surface of a target, is observed via an electron backscatter diffraction pattern method, an area ratio of crystal grains of which a {100} plane is oriented in the ND is 30% or more. An object of the present invention is to provide a tantalum sputtering target in which a deposition rate can be appropriately controlled under high-power sputtering conditions. When sputter-deposition is performed using this kind of a tantalum target, it is possible to form a thin film having superior film thickness uniformity and improve the productivity of the thin film formation process, even for micro wiring.