Plasma Shielding Unit for Edge and Rear Substrate Processing
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Solution Overview
Problem
Conventional semiconductor processing methods require separate devices for edge and rear etching of substrates, leading to increased installation space, contamination risk, and prolonged processing times due to substrate movement between chambers.
Innovation Solution
An apparatus and method for plasma processing that allows individual processing of edge and rear regions of a substrate within a single chamber using a stage and plasma shielding unit with adjustable gas supply pipes and support structures, enabling localized plasma application without substrate movement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate edge etching device and rear etching device are used, then plasma processing can be performed on edge and rear regions, but installation space increases and device complexity increases
Solution Approach 1:
The patent combines separate edge etching and rear etching devices into a single integrated chamber. The chamber includes a stage for holding the substrate, a plasma shielding unit with selective plasma generation capability, and gas supply systems that can independently control plasma formation in edge and rear regions. This merging eliminates the need for multiple separate devices while maintaining full processing capability.
Solution Approach 2:
The plasma shielding unit is divided into distinct functional zones: a plasma generation unit for creating plasma and a plasma shielding unit for controlling plasma distribution. Gas supply pipes are segmented to deliver different gases to different regions (edge region gas supply pipes vs. rear region gas supply pipes), enabling independent control of plasma processing in various substrate areas within a single chamber.
2Reliability
If substrate is moved between chambers for edge and rear etching, then plasma processing can be performed on different regions, but substrate contamination risk increases and processing time increases
Solution Approach 1:
The patent integrates edge etching and rear etching functions within a single chamber environment. The substrate remains stationary on the stage throughout the process, and the plasma shielding unit moves or adjusts its configuration to perform processing on different regions. This eliminates substrate movement between chambers, preventing contamination and reducing processing time.
Solution Approach 2:
The plasma shielding unit is designed with dynamic adjustability, allowing it to change its position or configuration to access different regions of the substrate. The driving unit enables the plasma shielding unit to move relative to the substrate, providing dynamic plasma processing capability without requiring substrate movement. This dynamic system maintains a constant vacuum environment while processing different areas.
3Reliability
If substrate is moved between chambers for edge and rear etching, then plasma processing can be performed on different regions, but substrate may be exposed to atmosphere and contaminated
Solution Approach 1:
The patent consolidates all plasma processing operations for edge and rear regions within a single sealed chamber. The substrate remains continuously enclosed in the vacuum environment throughout the entire processing sequence. The plasma shielding unit performs all necessary processing operations without requiring the substrate to be removed or exposed to atmospheric conditions, thereby preventing contamination.
4Reliability
If separate edge etching device and rear etching device are used, then plasma processing can be performed on edge and rear regions, but device complexity increases
Solution Approach 1:
The patent integrates the functionality of separate edge etching and rear etching devices into a single chamber system with a unified vacuum environment, stage, and plasma generation infrastructure. While the internal configuration includes multiple gas supply pipes and a plasma shielding unit with selective activation capability, these components work together as an integrated system rather than separate devices, reducing overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces installation space, minimizes substrate contamination, and shortens processing time by allowing simultaneous and controlled plasma treatment of edge and rear regions within a single chamber.
Implementation Method 1
a plasma shielding unit installed opposite to the stage in the chamber... supplying a reaction gas to an edge region of the substrate through the plasma shielding unit, thereby performing a primary plasma processing process on the substrate
Implementation Method 2
a first supply pipe provided at the stage to supply a reaction or non-reaction gas to one surface of the substrate
Data Source
AI summary
There are provided an apparatus and method for processing a substrate. By using the apparatus and method, plasma processing can be individually performed on each of edge and rear regions of a substrate in a single chamber. The apparatus includes a chamber providing a reaction space; a stage installed in the chamber; a plasma shielding unit installed opposite to the stage in the chamber; a support unit for supporting a substrate between the stage and the plasma shielding unit; a first supply pipe provided at the stage to supply a reaction or non-reaction gas to one surface of the substrate; and second and third supply pipes provided at the plasma shielding unit, the second supply pipe supplying a reaction gas to the other surface of the substrate, the third supply pipe supplying a non-reaction gas to the other surface.