Substrate Processing Chamber with Rotatable Magnet Assembly
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Solution Overview
Problem
Current hardmask materials used in semiconductor fabrication lack sufficient etch selectivity and deposition rate as critical dimensions decrease, leading to insufficient pattern transfer and increased stress in deposited films.
Innovation Solution
A substrate processing chamber with a unique design featuring a rotatable magnet assembly, electrostatic chuck, and flexible facilities cable, which utilizes dual-frequency RF power and variable pressure systems to enhance plasma confinement and film deposition, reducing neutral stress and improving planarity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional hardmask materials are used for pattern transfer, then the etching process can be performed, but the etch selectivity is insufficient and deposition rates are low as critical dimensions decrease
Solution Approach 1:
The patent applies parameter changes by utilizing dual-frequency RF power (combining 13.56 MHz and 2.45 GHz frequencies) to modify plasma characteristics. This enables simultaneous improvement of etch selectivity and deposition rate by controlling plasma chemistry and ion energy distribution, resolving the trade-off between precision and productivity in hardmask processing
Solution Approach 2:
The invention employs composite material strategies by depositing multi-layer hardmask structures with different material compositions optimized for specific functions. The combination of materials with complementary properties achieves both high etch selectivity relative to underlying layers and adequate deposition rates, addressing the contradiction through material composition optimization
2Manufacturing precision
If conventional deposition systems are used, then films can be deposited, but neutral stress accumulates causing film bowing and reduced planarity
Solution Approach 1:
The patent implements periodic action through alternating deposition cycles with controlled interruptions and parameter adjustments. By periodically modifying deposition conditions (gas flow rates, power levels, pressure), the system manages stress accumulation during film growth, preventing excessive bowing while maintaining good planarity
Solution Approach 2:
The invention uses an intermediary approach by introducing intermediate processing steps between deposition phases, such as plasma cleaning or gentle etching cycles, that act as mediators to relieve built-up neutral stress without removing significant film material, thereby maintaining planarity while reducing stress
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables improved etch selectivity and deposition rates, reducing film stress and bowing, thus enhancing the precision and efficiency of semiconductor device fabrication.
Implementation Method 1
a magnet assembly coupled to the spacer outside of the resonance cavity
Implementation Method 2
a substrate support disposed and movable within the resonance cavity, wherein the substrate support is coupled to a facilities cable that flexes based on operation of an actuator coupled to the substrate support
Data Source
AI summary
Embodiments of the present disclosure generally relate to apparatus and methods utilized in the manufacture of semiconductor devices. More particularly, embodiments of the present disclosure relate to a substrate processing chamber, and components thereof, for forming semiconductor devices.