Ion Beam Deposition Substrate Heating for Low Resistance Wiring
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Solution Overview
Problem
Existing metal wiring formation techniques, such as CVD and PVD, result in high resistance due to impurities and low crystallinity, limiting the effectiveness of ion beam deposition for semiconductor devices.
Innovation Solution
An ion beam deposition apparatus that heats the substrate to a temperature higher than room temperature, using a substrate heater and supplementary ion beams to enhance crystallinity and reduce resistance, forming a thin layer with a large grain size and low specific resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If CVD or PVD process is used to form metal wirings, then the wiring can be formed, but the resistance is relatively high
Solution Approach 1:
The patent applies parameter changes by heating the substrate to elevated temperatures (e.g., 100-300°C) during ion beam deposition, which fundamentally changes the deposition conditions compared to conventional PVD or CVD processes. This temperature parameter change enables the formation of metal layers with lower resistance by improving crystallinity and reducing impurities, while maintaining the capability to form various metal wirings through ion beam sputtering of metal targets.
2Manufacturing precision
If ion beam deposition is used to form thin layers, then deposition can be achieved, but the crystallinity and grain size are insufficient at room temperature
Solution Approach 1:
The patent changes the temperature parameter from room temperature to elevated temperatures (100-300°C) during ion beam deposition. This parameter change directly improves the crystallinity and grain size of the deposited thin layers, as the higher substrate temperature provides thermal energy for better atomic arrangement and crystal growth during the deposition process, thereby achieving superior manufacturing precision.
3Reliability
If metal wirings are formed with high crystallinity and large grain size, then resistance is reduced, but the process complexity increases
Solution Approach 1:
The patent achieves reduced wiring resistance through parameter changes in the deposition process (substrate heating to 100-300°C, ion beam energy control) rather than through complex multi-step processes or additional equipment. The ion beam deposition system with temperature control provides a relatively simple yet effective method to achieve high crystallinity and large grain size, minimizing process complexity while improving reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus effectively reduces the specific resistance of the thin layer, enabling the formation of low resistive metal wirings for semiconductor devices with improved crystallinity and deposition efficiency.
Implementation Method 1
a substrate heater to heat the substrate to a deposition temperature higher than a room temperature
Implementation Method 2
an ion gun to inject ion beams onto the target, such that ions of the deposition materials are discharged toward the substrate assembly
Implementation Method 3
a vacuum generator connected to the process chamber, the vacuum generator to apply a uniform predetermined vacuum pressure to the process chamber
Data Source
AI summary
An ion beam deposition apparatus includes a substrate assembly to secure a substrate, a target assembly slanted with respect to the substrate assembly, the target assembly including a target with deposition materials, an ion gun to inject ion beams onto the target, such that ions of the deposition materials are discharged toward the substrate assembly to form a thin layer on the substrate, and a substrate heater to heat the substrate to a deposition temperature higher than a room temperature.