Organic Film Formation for Substrate Etching Protection
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Solution Overview
Problem
In substrate processing, oxygen gas used for forming silicon oxide films reacts with carbon in resist masks, causing deformation and damaging the substrate, and also oxidizes the etching target region, leading to undesirable damage during plasma etching. Additionally, when the etching target region is made of silicon oxide, the silicon oxide film is removed along with it during plasma etching, necessitating a film that can suppress etching.
Innovation Solution
A method involving the formation of an organic film on the substrate surface through the polymerization of first and second organic compounds, without using oxygen gas, where the film is formed by alternately supplying these compounds in a chamber with a heated patterned region, allowing for the suppression of substrate damage and enabling the formation of a film that can inhibit etching when the etching target region is plasma-etched.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If oxygen gas is used to form silicon oxide film, then film formation is achieved, but substrate damage occurs due to oxidation of etching target region and deformation of resist mask
Solution Approach 1:
The patent replaces oxygen gas with nitrogen gas to create an inert atmosphere during film formation. This prevents oxidation of the etching target region and deformation of the resist mask while still enabling silicon oxide film formation through alternative chemical reactions between silicon and nitrogen-containing compounds.
Solution Approach 2:
The patent changes the chemical composition parameters of the processing gas from oxygen-based to nitrogen-based. By adjusting gas composition and controlling reaction conditions, the film formation process achieves the desired silicon oxide layer without the harmful oxidative effects of oxygen gas.
2Reliability
If silicon oxide film is formed to protect side surface, then protection is provided, but film is removed along with etching target region during plasma etching
Solution Approach 1:
The patent forms a composite structure where an organic film layer is deposited over the silicon oxide film. This organic film acts as a protective barrier during plasma etching, preventing the silicon oxide film from being removed along with the etching target region, while the silicon oxide film continues to provide side surface protection.
Solution Approach 2:
The patent applies an organic film layer in advance over the silicon oxide film to cushion and protect it during subsequent plasma etching processes. This pre-applied protective layer prevents direct exposure of the silicon oxide film to plasma, thereby maintaining its integrity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively prevents substrate damage from oxygen gas and forms a film that can suppress etching, maintaining the film's functionality during plasma etching, even when the etching target region is made of silicon oxide.
Implementation Method 1
an organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound
Implementation Method 2
the film is formed by alternately supplying these compounds in a chamber with a heated patterned region
Data Source
AI summary
A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.