Gas Distributor for Spatially Separating Deposition and Surface Treatment Gases
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Solution Overview
Problem
Existing substrate processing apparatuses face issues with foreign matters in thin films, leading to deteriorated film quality and increased manufacturing costs due to the need for additional surface treatment processes outside the processing chamber.
Innovation Solution
A substrate processing apparatus and method that integrates both thin film deposition and surface treatment processes within the same processing space, using a gas distributor to spatially separate and distribute process gases for film deposition and surface treatment gases, allowing for sequential or repetitive processing of thin films to improve quality and reduce foreign matter contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If thin film deposition is performed using plasma in a substrate processing apparatus, then a thin film can be formed on the substrate, but foreign matters are introduced into the thin film which deteriorates film quality
Solution Approach 1:
The patent combines the thin film deposition process and surface treatment process into a single integrated apparatus. The surface treatment chamber is merged with the deposition chamber, allowing both processes to occur in the same vacuum environment without breaking vacuum, thereby preventing foreign matter contamination while maintaining film quality
Solution Approach 2:
The surface treatment is performed immediately after thin film deposition while the film is still hot and before the vacuum is broken. This preliminary action removes foreign matters right when they are most effectively removable, preventing contamination that would occur if the vacuum were broken and the film cooled down
2Manufacturing precision
If additional surface treatment chamber is used to remove foreign matters from thin film, then film quality can be improved, but manufacturing cost increases
Solution Approach 1:
The patent merges the surface treatment chamber and deposition chamber into a single integrated apparatus sharing common vacuum systems, gas supply systems, and control systems. This reduces device complexity and manufacturing cost while maintaining the capability to perform both surface treatment and thin film deposition
Solution Approach 2:
The integrated apparatus is designed to perform multiple functions - both surface treatment and thin film deposition - within a single system. The same vacuum chamber, pumping system, and control system serve both processes, eliminating the need for separate dedicated chambers and reducing overall system complexity
3Object-affected harmful factors
If separate surface treatment process is performed outside the processing chamber, then foreign matters can be removed, but processing time and efficiency are reduced
Solution Approach 1:
The patent enables continuous processing by performing surface treatment immediately after deposition without breaking vacuum or interrupting the process flow. The vacuum environment is maintained continuously, and the substrate is transferred within the same chamber, eliminating idle time and maintaining continuous useful action throughout the process
Solution Approach 2:
Surface treatment is performed as a preliminary step immediately following deposition while the film is still in the vacuum chamber and hot. This eliminates the need for subsequent separate treatment steps, breaking the production cycle, and cooling/downloading the substrate, thereby improving overall processing efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This integrated approach enhances film quality by removing foreign matters during the surface treatment process, reducing manufacturing costs and improving the efficiency of thin film deposition, with improved resistivity and surface roughness characteristics compared to traditional methods.
Implementation Method 1
a gas distributor for spatially separating process gas for depositing a thin film on the substrate from a surface treatment gas for performing a surface treatment of the thin film, and locally distributing the process gas and the surface treatment gas on the substrate supporter
Implementation Method 2
The plasma electrode 20 is electrically connected with a RF (Radio Frequency) power source 24 through a matching member 22. The RF power source 24 generates RF power, and supplies the generated RF power to the plasma electrode 20
Implementation Method 3
The RF power source 24 generates RF power, and supplies the generated RF power to the plasma electrode 20
Implementation Method 4
a gas distributor for spatially separating process gas for depositing a thin film on the substrate
Implementation Method 5
a gas distributor for spatially separating process gas for depositing a thin film on the substrate from a surface treatment gas for performing a surface treatment of the thin film
Data Source
AI summary
Disclosed is a substrate processing apparatus and method which facilitates to sequentially or repetitively carry out a thin film deposition process and a surface treatment process inside one process space, wherein the substrate processing apparatus comprises a process chamber for providing a process space; a substrate supporter for supporting at least one of substrates and moving the supported substrate in a predetermined direction; a chamber lid confronting the substrate supporter; and a gas distributor for spatially separating process gas for depositing a thin film on the substrate from a surface treatment gas for performing a surface treatment of the thin film, and locally distributing the process gas and the surface treatment gas on the substrate supporter, wherein the gas distributor confronting the substrate supporter is provided in the chamber lid.