Semiconductor Correction Memory Diagnosis via Variable Gate Voltage
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Solution Overview
Problem
Conventional semiconductor devices and sensor apparatuses face challenges in detecting and preventing incorrect data reading from nonvolatile memory due to natural deterioration, which can lead to simultaneous errors in multiple cells, making it difficult to anticipate and prevent data errors.
Innovation Solution
A semiconductor device with a correction memory that uses different reading conditions to diagnose and detect errors, including varying gate voltages and threshold currents, to differentiate between normal and diagnostic data reading, thereby anticipating and preventing data errors by altering the conditions to make errors more likely during diagnosis.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the same reading condition is used for both normal data reading and diagnosis, then the device complexity is reduced, but the ability to detect potential errors in correction memory deteriorates
Solution Approach 1:
The patent applies parameter changes by using different gate voltages for normal reading (first gate voltage) and diagnostic reading (second gate voltage). This allows the same hardware to perform both functions with distinct operational parameters, enabling error detection without adding complex external diagnostic equipment.
Solution Approach 2:
The patent implements preliminary action by performing diagnostic reading before normal reading to detect potential errors in advance. The diagnosis section reads correction data under the second gate voltage condition to identify deteriorated cells prior to actual sensor operation, allowing preventive maintenance.
2Measurement precision
If the gate voltage is increased to make errors more likely during diagnosis, then the error detection sensitivity is improved, but the risk of false positives during normal operation increases
Solution Approach 1:
The patent segments the reading operation into two distinct modes: normal reading using the first gate voltage and diagnostic reading using the second gate voltage. This segmentation ensures that the high-voltage diagnostic mode only activates during diagnosis, preventing false positives during normal sensor operation while maintaining high detection sensitivity.
Solution Approach 2:
The patent applies dynamics by making the gate voltage adjustable based on the operational mode. The control section dynamically selects between the first gate voltage for normal operation and the second gate voltage for diagnosis, allowing the system to adapt its behavior to the current operational context and avoid inappropriate high-voltage exposure during normal use.
3Reliability
If different gate voltages are used for normal and diagnostic reading, then the error detection capability is improved, but the device complexity increases
Solution Approach 1:
The patent applies universality by designing the control section to perform multiple functions: it controls normal reading operations, performs diagnostic reading, and manages the selection between different gate voltages. This multi-functionality is achieved within the existing control architecture without requiring separate dedicated diagnostic hardware, thereby limiting the increase in device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively detects potential errors in correction data before they occur, allowing for timely replacement or correction of sensor apparatuses and preventing incorrect data output, thus ensuring reliable operation in applications like automotive and medical fields.
Implementation Method 1
a floating gate that accumulates charge corresponding to a value of the correction data, and changes the threshold voltage according to the accumulated charge
Implementation Method 2
an output terminal having an output value that changes according to whether or not the gate voltage applied to the control gate is greater than or equal to a threshold voltage
Data Source
AI summary
To detect deterioration of a correction memory, provided is a semiconductor device including the correction memory that stores therein correction data for correcting a correction target; a correcting section that corrects a detection value of a sensor element, using correction data read from the correction memory; a diagnosing section that diagnoses the correction memory, using the correction data read from the correction memory; and a control section that controls reading conditions used when reading the correction data from the correction memory, wherein the control section causes a first reading condition, used when reading the correction data for correcting a correction target, to differ from a second reading condition, which is used when reading the correction data for the diagnosis.