Counter Doping Region Enhances SBD Breakdown Voltage
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Solution Overview
Problem
Conventional semiconductor devices with Schottky Barrier Diodes (SBDs) face limitations in breakdown voltage and on-resistance due to high Epitaxial layer resistivity, leading to increased power consumption and reduced switching speed.
Innovation Solution
A semiconductor device with a counter doping region and a Schottky barrier diode configuration, where the counter doping region reduces the net doping concentration at the substrate's surface, enhancing breakdown voltage by increasing surface resistance through a specific trench and doping region structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Shape
If a high concentration Epitaxial layer with low resistivity is used to reduce on-resistance, then on-resistance decreases, but breakdown voltage decreases
Solution Approach 1:
The patent applies local quality by creating a counter doping region with different doping concentration specifically in the SBD formation area, while maintaining high concentration in other regions. This localized differentiation allows the SBD region to achieve higher breakdown voltage through reduced net doping concentration, while other regions maintain low on-resistance through high doping concentration.
Solution Approach 2:
The patent changes the doping concentration parameter by performing counter doping (introducing dopants of opposite polarity) in the SBD region. This parameter change reduces the net doping concentration from high concentration to effectively lower concentration, thereby increasing breakdown voltage without requiring a global change in Epitaxial layer resistivity.
2Ease of manufacture
If conventional doping methods are used to achieve uniform doping concentration, then manufacturing process is simple, but breakdown voltage is limited
Solution Approach 1:
The patent implements local quality by selectively applying counter doping only in the SBD formation region using photolithography masking. This allows the manufacturing process to remain relatively simple while achieving localized doping concentration modification that enhances breakdown voltage in the critical SBD area.
3Reliability
If Guard Ring or trench field plate is applied to minimize electric field, then breakdown voltage is improved, but electric field distribution characteristic deviates from theoretical range
Solution Approach 1:
The patent changes the fundamental parameter approach from geometric modifications (Guard Rings, trench field plates) to doping concentration modification. By adjusting the net doping concentration through counter doping, the patent achieves improved breakdown voltage with more predictable and controllable electric field distribution characteristics that align better with theoretical models.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The counter doping process effectively increases the breakdown voltage and reduces on-resistance, improving the semiconductor device's switching speed and power efficiency.
Implementation Method 1
a counter doping region having another concentration, and a Schottky barrier diode (SBD) comprising the counter doping region
Implementation Method 2
A Schottky Barrier Diode (SBD) forms the Schottky Barrier by means of a junction between metal and semiconductor
Data Source
AI summary
A semiconductor device includes a substrate, a counter-doping region, and a Schottky barrier diode (SBD) in which a breakdown voltage is improved by using counter doping, and a manufacturing method thereof. A breakdown voltage may be improved by lowering a concentration of impurity on the region and enhancing the characteristics of the semiconductor device including the SBD.