Diode TRIZ Cases

Wavy monolithic interconnects tune front-contact layer sheet resistance in thin-film photovoltaic modules.

A silicon carbide merged p-i-n Schottky diode uses segmented contacts to modulate conduction area.

A semiconductor device with a resistive field plate structure separates circulation wires from conductor patterns to optimize insulation film thickness.

Deeper Schottky trenches relax electric field concentration on gate oxide films, reducing on-resistance and improving avalanche breakdown tolerance.

Voltage drop components enable sequential switching of parallel MOSFETs from one gate signal, eliminating complex individual driver circuits.

Segmented trench diodes lower forward voltage to cut power losses while maintaining breakdown voltage.

Dual doped wells in a substrate form a voltage-controlled resistor that achieves high resistivity without additional manufacturing masks.

A silicon carbide semiconductor device uses a p+-type region to extract holes from the active area.

A coplanar conductive interconnect joins photovoltaic cells through substrate vias to establish electrical coupling.

Small-area buried regions in a semiconductor substrate maintain high impurity concentration while minimizing capacitance for low breakover voltage.

Segmenting quantum wells into thin sub-layers mitigates the confined Stark effect, enabling wider wells and deeper UV emission.

Integrating the bypass diode into the silicon handle substrate reduces mass and assembly complexity for space applications.

A lateral-vertical contact plug structure resolves narrow mesa contact difficulties by spanning the entire mesa width to ensure reliable electrical connection.

Narrow mesa widths in Schottky regions reduce reverse leakage and forward voltage compared to traditional trench processes.

A plane wave imager senses incoherent light phase differences using evanescent couplers to compute images without lenses.

A trench-isolated RESURF diode structure embeds a buried cathode extension region beneath an anode extension to form a large p-n junction.

A photoelectric conversion device generates synthetic dark-time image signals to detect random telegraph signal noise in CMOS sensors.

A GaN LED uses a resistivity gradient in the semiconductor layer to confine current within specific active regions.

A semiconductor device uses a counter doping region to increase surface resistance and improve breakdown voltage.

Opposite polarity control voltages applied to series-connected variable capacitor assemblies cancel high AC voltage stress, stabilizing capacitance adjustment.

A monolithic integrated circuit merges an InGaN solar cell array with a GaN DC-DC converter on a single substrate.

Eliminating parasitic bipolar structures via a trench contact-free design reduces recovery time while increasing transistor density.

Multiple quantum-confined structures match energy levels to enable high-order light emission without increasing current injection density.

Mechanical vibration of the screen creates dynamic depth perception while eliminating ghost effects common in holography.

A vehicle lidar sensor combines direct time-of-flight and indirect phase difference measurements to capture high-resolution distance images.

Titanium barriers prevent aluminum diffusion into polysilicon gates, maintaining threshold voltage stability against stress-induced degradation.

Contoured corner portions of the p-type region suppress dielectric breakdown by distributing electron hole current evenly across the non-operating area.

Side surface extraction with recessed portions resolves the contradiction between miniaturization and luminance loss in multi-element arrays.

An asymmetric ESD protection network uses reactive components to shield FM transmitter inputs from electrostatic discharge events.

A graphene switching device integrates source, drain, and gate electrodes to form a Schottky barrier at the channel interface.

Separating anode and cathode gate thyristors with resistors or diodes prevents inadvertent starting during charge recovery, maintaining simplified control.

Independent structuring units compensate for thermal distortion to keep parallel tracks at a fixed distance in thin-film solar modules.

Segmented drift regions in a silicon carbide trench MOSFET limit current paths and alleviate gate fields to extend short circuit tolerance.

An undoped barrier prevents silicon diffusion from the cap into the window, preserving open circuit voltage despite integrated bypass diodes.

A semiconductor device incorporates a pinch-off region to adjust current flow within the bootstrap diode structure.

A trench gate structure with a dummy trench reduces negative capacitance without decreasing impurity concentration.

Recessed cathodes with undercut silicide reduce electric field concentration, preventing parasitic leakage and hot carrier damage in unguarded Schottky diodes.

A plasmonic resonator enhances light-matter interaction within a thin semiconductor absorber layer.

A stacked III-V semiconductor diode uses a graded n-layer dopant profile to lower turn-on resistance and capacitance.

Metal silicide structures form Schottky contacts to reduce voltage spikes during dead time periods, enhancing operational stability.

A power semiconductor device manages displacement currents through a field plate structure to protect the gate insulating film.

Integrated super barrier rectifier creates a low potential barrier for majority carriers in the shielded gate trench MOSFET channel.

A vertical tunneling transistor uses an ultra-thin body structure to induce electron channels along oxide pillar sidewalls.

Image sensing elements avoid overlapping light-emitting sub-pixels to enable full screen design without blocking light emission.

Segmented channel doping in a fin tunnel field effect transistor enables controlled current flow while minimizing off-state leakage current.

A trench MOSFET combines conventional and diode-connected cells to lower gate charge while maintaining low on-resistance.

Embedding Schottky metal in contact trenches reduces cell pitch and ON resistance without degrading barrier coverage.

A SiC insulated gate device suppresses bipolar operation and reduces ON resistance through an injection suppression region with a narrower bandgap.

A floating well region extends beyond the field insulating film to manage depletion layer behavior.

Band energy alignment in a unified diode structure integrates negative resistance and rectifying functions, eliminating separate component manufacturing.