Wavy monolithic interconnects tune front-contact layer sheet resistance in thin-film photovoltaic modules.
A silicon carbide merged p-i-n Schottky diode uses segmented contacts to modulate conduction area.
A semiconductor device with a resistive field plate structure separates circulation wires from conductor patterns to optimize insulation film thickness.
Deeper Schottky trenches relax electric field concentration on gate oxide films, reducing on-resistance and improving avalanche breakdown tolerance.
Voltage drop components enable sequential switching of parallel MOSFETs from one gate signal, eliminating complex individual driver circuits.
Segmented trench diodes lower forward voltage to cut power losses while maintaining breakdown voltage.
Dual doped wells in a substrate form a voltage-controlled resistor that achieves high resistivity without additional manufacturing masks.
A silicon carbide semiconductor device uses a p+-type region to extract holes from the active area.
A coplanar conductive interconnect joins photovoltaic cells through substrate vias to establish electrical coupling.
Small-area buried regions in a semiconductor substrate maintain high impurity concentration while minimizing capacitance for low breakover voltage.
Segmenting quantum wells into thin sub-layers mitigates the confined Stark effect, enabling wider wells and deeper UV emission.
Integrating the bypass diode into the silicon handle substrate reduces mass and assembly complexity for space applications.
A lateral-vertical contact plug structure resolves narrow mesa contact difficulties by spanning the entire mesa width to ensure reliable electrical connection.