Resistive Field Plate Semiconductor Device Moisture Resistance
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Solution Overview
Problem
Semiconductor devices with resistive field plates face reliability issues due to defective moisture resistance, particularly caused by low adhesion between the surface protective film and the sealing body, leading to excessive moisture penetration and corrosion, and increased breakdown voltage is challenging to maintain while ensuring reliable electric field relaxation.
Innovation Solution
The semiconductor device design includes a resistive field plate structure with conductor patterns surrounding the element region, where the outer circumference ends of internal and external circulation wires are separated from the conductor patterns, and the insulation film thickness is optimized to reduce electric field strength and prevent moisture penetration, allowing for uniform electric field distribution and improved reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the surface protective film and sealing body are in direct contact to form a sealed structure, then the sealing performance is improved, but the adhesion between the film and sealing body becomes insufficient, leading to moisture penetration and corrosion
Solution Approach 1:
The patent introduces a third insulation film as an intermediary layer between the surface protective film and the sealing body. This intermediate layer improves adhesion by providing a bonding interface that bridges the two components, preventing direct contact while maintaining strong attachment and blocking moisture penetration paths.
Solution Approach 2:
The patent employs a composite structure consisting of multiple insulation films with different properties. The first insulation film provides basic insulation, the second insulation film provides additional protection, and the third insulation film enhances adhesion. This composite approach combines the advantages of different materials to achieve both sealing performance and adhesion strength.
2Reliability
If the conductor plate part is positioned close to the element region to improve electric field relaxation, then the breakdown voltage increases, but the electric field strength at wire ends becomes excessive, causing corrosion and reducing reliability
Solution Approach 1:
The conductor plate part is segmented into multiple conductor patterns (first, second, and third conductor patterns) arranged at different positions. This segmentation allows the electric field to be distributed more evenly, preventing concentration at single points and reducing corrosion risk while maintaining overall breakdown voltage performance.
Solution Approach 2:
Different regions of the conductor plate structure are assigned different functions: the first conductor pattern provides primary field relaxation, the second conductor pattern extends protection outward, and the third conductor pattern fills intermediate spaces. This local differentiation optimizes electric field distribution, reducing stress at wire ends while maintaining high breakdown voltage in critical regions.
3Reliability
If multiple insulation films with different thicknesses are used to optimize electric field distribution, then the electric field strength is reduced and moisture resistance is improved, but the device structure and manufacturing process become more complex
Solution Approach 1:
The patent varies the thickness parameter of insulation films across different regions and layers. The first insulation film has a standard thickness, the second insulation film is thinner for specific field control, and the third insulation film has optimized thickness for adhesion. This parameter variation achieves optimal electric field distribution and moisture resistance without requiring fundamentally new structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances moisture resistance and reliability by reducing the electric field strength at the wire ends, preventing corrosion, and maintaining high breakdown voltage without increasing process complexity or cost.
Implementation Method 1
a third insulation film is deposited in such a manner as to cover the first insulation film, the second insulation film, and the conductor plate part
Implementation Method 2
the outer circumference end of the first metal pattern is separated from the outer circumference end of the first conductor pattern toward the element region
Data Source
AI summary
The reliability of resistive field plate part-containing semiconductor device is improved. In peripheral region of semiconductor chip, the outer circumference end of internal circulation wire is separated from outer circumference end of first conductor pattern of resistive field plate part toward element region. Inner circumference end of external circulation wire is separated from inner circumference end of second conductor pattern of resistive field plate part toward outer circumference of the chip. First conductor pattern of resistive field plate part is partially extended to over thin insulation film to form first lead-out part, and internal circulation wire and first lead-out part of first conductor pattern are electrically coupled via first coupling hole. Second conductor pattern of resistive field plate part is partially extended to over thin insulation film to form second lead-out part, external circulation wire and second lead-out part of second conductor pattern are electrically coupled via second coupling hole.