Trench Diode Segmentation for Automotive Power Loss Reduction
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Solution Overview
Problem
Standard pn diodes in automotive applications experience significant power losses due to forward voltage and breakdown voltage issues, which are exacerbated by increased electrical current demands, necessitating the development of high-efficiency diodes that can reduce these losses and protect electric components during load dumps.
Innovation Solution
An integrated circuit design featuring a power component with trenches and a diode component, where the diode device trenches are adjacent and electrically coupled with a conductive material to a source terminal, allowing for efficient energy dissipation and reduced forward voltage, thereby minimizing power losses and enhancing breakdown voltage capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If standard pn diodes are used for rectification, then the diodes can perform basic rectification function, but power losses increase due to forward voltage and increased electrical current demands
Solution Approach 1:
The diode is segmented into multiple regions including a first doped region, second doped region, third doped region, and fourth doped region arranged in a specific configuration. This segmentation allows optimization of forward voltage characteristics while maintaining breakdown voltage capability, thereby reducing power losses without compromising reliability
Solution Approach 2:
Different doped regions are assigned different local properties with varying doping concentrations and types. The first and second doped regions have different doping characteristics from the third and fourth doped regions, enabling localized optimization of electrical characteristics to reduce power losses while maintaining breakdown voltage handling capability
2Quantity of substance
If the electric generator is used to meet increased electrical current demands, then the electrical current supply is improved, but power losses increase due to forward voltage multiplication
Solution Approach 1:
The doping concentration and type are changed across different regions of the diode structure. By varying these parameters in the first, second, third, and fourth doped regions, the forward voltage is reduced, which directly reduces power losses (P = V × I) while maintaining the ability to handle increased electrical current demands
3Loss of energy
If the diode structure is optimized for reduced forward voltage, then power losses are reduced, but breakdown voltage capability may be compromised
Solution Approach 1:
The diode is divided into multiple functional segments with different doping characteristics. The first and second doped regions are configured to optimize forward voltage and reduce power losses, while the third and fourth doped regions are configured to maintain breakdown voltage capability, allowing both requirements to be satisfied simultaneously
Solution Approach 2:
The diode employs a composite doped structure combining multiple doped regions with different electrical properties. This composite structure enables the diode to exhibit both low forward voltage characteristics (reducing power losses) and high breakdown voltage characteristics (maintaining protection capability) within the same device
Data Source
AI summary
An integrated circuit includes a power component including a plurality of first trenches in a cell array and a first conductive material in the first trenches electrically coupled to a gate terminal of the power component, and a diode component including a first diode device trench and a second diode device trench disposed adjacent to each other. A second conductive material in the first and the second diode device trenches is electrically coupled to a source terminal of the diode component. The first trenches, the first diode device trench and the second diode device trench are disposed in a first main surface of a semiconductor substrate. The integrated circuit further includes a diode gate contact including a connection structure between the first and the second diode device trenches. The connection structure is in contact with the second conductive material in the first and the second diode device trenches.