Cover Substrate Shielding for High-Temperature Clean
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Solution Overview
Problem
In semiconductor processing, the buildup of residues and contaminants in process chambers leads to particle formation and degradation of deposited films, and high temperatures cause erosion and corrosion, limiting optimal film quality and chamber component longevity.
Innovation Solution
A cover substrate supported by lift pins is used to shield the substrate support from halogen reactants, allowing temperatures above 650 degrees Celsius, and an inert bottom purge flow is employed to control gas flow profiles and prevent free radical damage during cleaning.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the substrate support is heated to high temperatures for optimal film quality, then film quality is improved, but the substrate support suffers from erosion and corrosion by halogen clean
Solution Approach 1:
A cover substrate is introduced as an intermediary component between the halogen-containing process gas and the substrate support. The cover substrate is selectively removed to allow halogen reactants to contact only specific areas of the substrate support, thereby protecting the substrate support from complete erosion and corrosion while still allowing high-temperature processing for optimal film quality.
Solution Approach 2:
The cover substrate is selectively removed to create localized regions where halogen reactants can contact the substrate support. This selective exposure allows different areas of the substrate support to have different functional properties - some areas are protected while others are intentionally exposed for cleaning, resolving the contradiction between overall protection and localized cleaning needs.
2Object-generated harmful factors
If halogen containing gas is supplied for cleaning the chamber, then residue removal is improved, but free radical damage occurs to the substrate support
Solution Approach 1:
The cover substrate serves as a protective intermediary that blocks halogen-containing process gas from directly contacting the substrate support in most areas. By selectively removing portions of the cover substrate, the patent enables controlled exposure to halogen reactants for residue removal while preventing widespread free radical damage to the substrate support.
Solution Approach 2:
The cover substrate is positioned in advance to prevent halogen reactants from contacting the substrate support. Selective removal of the cover substrate creates predetermined pathways for controlled halogen exposure, thereby preventing unintended free radical damage while allowing necessary cleaning action where needed.
3Object-generated harmful factors
If the processing chamber is cleaned frequently to remove residues, then particle formation is reduced, but productivity is decreased due to downtime
Solution Approach 1:
The cover substrate is designed as a consumable component that is selectively removed during cleaning cycles. By sacrificing the cover substrate in controlled amounts, the patent enables effective chamber cleaning without requiring complete disassembly or extensive downtime, thereby maintaining productivity while reducing particle formation from residue buildup.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution prevents damage to sensitive components, enhances film quality, and increases the service interval and throughput of the process chamber by restricting halogen reactants and controlling gas flow to prevent free radical damage.
Implementation Method 1
an inert bottom purge flow is employed to control gas flow profiles and prevent free radical damage during cleaning
Implementation Method 2
the cover substrate and the purge flow restricts halogen reactants from contacting the substrate support
Implementation Method 3
raising the cover substrate via the lift pins to expose a space between the cover substrate and the substrate support
Data Source
AI summary
Embodiments disclosed herein generally relate to systems and methods to prevent free radical damage to sensitive components in a process chamber and optimizing flow profiles. The processing chamber utilizes a cover substrate on lift pins and an inert bottom purge flow to shield the substrate support from halogen reactants. During a clean process, the cover substrate and the purge flow restricts halogen reactants from contacting the substrate support. The method of cleaning includes placing a cover substrate on a plurality of lift pins that extend through a substrate support in a processing chamber, raising the cover substrate via the lift pins to expose a space between the cover substrate and the substrate support, supplying a halogen containing gas into the processing chamber, supplying a second gas through an opening in the processing chamber, and flowing the second gas through the space between the cover substrate and the substrate support.