Electric Discharge Tubes TRIZ Cases

Multi-layer wafer fabrication creates a sealed gas-filled cavity, resolving the trade-off between compact detector size and reliable gas containment.

A charged particle beam device detects mirror electrons while excluding secondary electrons to form high-contrast defect images.

Segmented optical adjustment layers separate particle functions, reducing haze and surface roughness while maintaining hardness.

AgCu alloy sintering additive increases FePt target density while reducing particle generation caused by thermal expansion mismatch.

A monitoring device extracts high and low frequency components from ion beam current signals to identify noise sources.

A spherical air bearing assembly enables four degrees of freedom movement for precise wafer positioning within high vacuum process chambers.

Segmented terminal groove simplifies mold shape while maintaining housing strength.

Insulating terminal coatings and vertical spacing reduce horizontal gaps, lowering material waste while preventing electrostatic discharge damage.

A segmented detector with transparent gaps captures overlapping exit angles of transmitted charged particles to acquire structural data.

Segmented plate regions with independent fluid control reduce center-edge temperature differences, lowering thermal stress and improving etching yield.

Spaced ground members around coils promote air convection, reducing coil temperature and stabilizing impedance-frequency characteristics in plasma processing.

Kinked flexible printed circuit boards in a retracted sample holder resolve the contradiction between connection reliability and tilting capability.

An integrated laser reflective mirror in an ultrafast electron gun directs light onto the cathode, eliminating drift sections that reduce electron coherence.

High-frequency bias power supplies generate periodic electric waveforms to control plasma sheath thickness across substrate and edge ring.

A chuck-based device cleans semiconductor chamber surfaces using a padding film and motion mechanism.

Nitrogen and hydrogen in the gas mixture prevent radiation-induced polymerization, maintaining stable gas gain and high energy spectrum resolution.

A spring-loaded pin fills hex socket voids in plasma processing fasteners to enable tool access.

Segmented remote plasma etching achieves high silicon selectivity over oxide and nitride layers.

Adjusting radio frequency power during sputtering controls oxidation degrees, resolving resistivity distribution issues across wafers.

Segmented gas passages isolate the remote plasma system from processing gas, preventing residue formation that reduces component life.

Alternating chemistries in a continuous process eliminate Bosch scalloping while maintaining high etch rates.

A charged-particle beam device estimates defect size in the depth direction using brightness ratio analysis.

A data generating apparatus allocates irradiation differences across adjacent pixels to achieve precise beam control.

A hexaboride single crystal Schottky emitter uses a cone-shaped (310) tip to deliver high current density and monochromaticity.

Individually controllable unit cells in a plasma profile control plate adjust local plasma density to resolve non-uniform distribution defects.

Segmenting discharge into parallel micro-channels prevents arcing and electrode wear while enabling stable non-thermal plasma operation with common gases.

A scanning probe microscope scratches a transmission electron microscopy specimen to achieve sub-100 nm thickness without complex focused ion beam milling.

Nested opening and closing bodies provide uniform pressing force and efficient heat dissipation for electrical components.

A control device adjusts beam scan and wafer motion speeds to implant ions with a desired two-dimensional non-uniform dose distribution.

Bubbling inert gas through molten indium floats and removes oxide slag, ensuring adhesion quality between the target and backing tube.

Nested ionization chambers correct partial volume effects in small radiation beams by combining independent measurements from inner and outer detector volumes.

Modulated ion-induced atomic layer deposition activates precursor vapor via plasma ions to deposit conformal barrier layers at low substrate temperatures.

Integrating the manipulator and holder into one unit simplifies structure while maintaining samples in an inert environment to prevent contamination.

Inclined beam passages converge multiple charged particle beams to a common spot using a shared excitation coil, reducing optical aberrations.

Segmented main and sub deflectors average writing errors across beams while eliminating settling time losses from inter-beam pitch adjustments.

A cover substrate on lift pins shields the substrate support from halogen reactants during cleaning.

Radial power transmission elements with continuous slits deliver uniform electromagnetic energy to plasma chambers, resolving non-uniform density issues across substrates.

Adjustable centering mechanism maintains controlled gap between shield and cover ring in physical vapor deposition process kits.

Transforming a thin lamella into a needle shape eliminates projection effects in S/TEM and uncontrollable evaporation in atom probe microscopy.

Multi-beam writing apparatus recalculates correction coefficients during operation to mitigate position deviations and maintain writing accuracy.

A shield blocks radicals infiltrating the electrode gap, preserving electrostatic attraction durability and temperature adjustment accuracy.

A specialized nozzle design enables electron beams to penetrate narrow bottle necks, resolving blockage issues during interior sterilization.

Periodic power pulses prevent target poisoning to maintain color homogeneity across large substrate surfaces.

A tubular sputtering target uses a damping element between the connector and body to distribute stress, preventing crack formation under thermal loads.

Varying relative densities in tube sections compensates for uneven end removal, preventing arcing and particle generation.

Amorphous silicon layers counteract compressive stress on PVD cover rings to prevent flaking.

A plasma ECR height monitor tracks electron cyclotron resonance position to enable precise frequency control of the radio power supply.

A controller estimates film thickness using DC self-bias voltage and RF power measurements.

Segmenting sputtering and plasma steps avoids explosion risks from high hydrogen concentrations while ensuring uniform termination across the film thickness.