Ion Implanter Control for Non-Uniform Dose Distribution
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Solution Overview
Problem
The existing ion implanter technologies face challenges in efficiently achieving desired two-dimensional non-uniform dose distributions on semiconductor wafers, requiring labor-intensive data set preparation and adjustment, which degrades productivity due to the need for individualized settings for each wafer or lot.
Innovation Solution
An ion implanter system that includes a beam generator, a beam scanner, a platen driving device, and a control device capable of simulating and adjusting beam scan speed and wafer motion speed based on pre-defined correction functions and correlation information to achieve the desired two-dimensional non-uniform dose distribution, allowing for the reuse of accumulated data sets and automatic preparation of new sets when similar patterns are identified.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If individualized data set preparation and adjustment is performed for each wafer or lot to achieve desired two-dimensional non-uniform dose distribution, then manufacturing precision is improved, but productivity deteriorates due to labor-intensive processes
Solution Approach 1:
The system performs preliminary simulation of the ion implantation process to predict the actual dose distribution before actual implantation. Based on the simulated results, correction functions are automatically generated in advance to compensate for expected deviations from the target pattern. This preliminary action eliminates the need for labor-intensive post-implantation measurement and adjustment cycles, thereby improving productivity while maintaining manufacturing precision.
Solution Approach 2:
The system establishes a feedback loop where the simulated dose distribution is compared with the target pattern, and correction functions are automatically generated based on the deviation. This automated feedback mechanism replaces manual data set preparation and adjustment, significantly reducing labor intensity while achieving the desired two-dimensional non-uniform dose distribution with high precision.
2Manufacturing precision
If complex simulation and correction function generation is performed to achieve accurate non-uniform implantation, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The control device automatically performs simulation, compares results with target patterns, generates correction functions, and determines optimized beam and wafer motion parameters without requiring external intervention. This self-service capability encapsulates complex algorithms within the control system, making the sophisticated precision control transparent to the user and effectively hiding the complexity while delivering high manufacturing precision.
Solution Approach 2:
The system replaces manual mechanical adjustment processes with automated computational simulation and algorithm-based correction function generation. By substituting physical trial-and-error adjustment with virtual simulation and mathematical optimization, the system achieves high precision while the complexity is managed through software rather than requiring complex hardware adjustments.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the burden on users by automating the preparation of data sets and improving productivity by enabling efficient realization of non-uniform implantation patterns across different wafers or lots, enhancing the yield of semiconductor devices without excessive degradation in implanter productivity.
Implementation Method 1
a beam generator that generates an ion beam
Implementation Method 2
a beam scanner that performs reciprocating scan with the ion beam in the first direction
Implementation Method 3
a platen driving device that performs reciprocating motion on a wafer in a second direction perpendicular to the first direction
Implementation Method 4
implants the ions having the two-dimensional non-uniform dose distribution similar to the target pattern, into the wafer processing surface
Data Source
AI summary
An ion implanter includes a beam generator that generates anion beam, a beam scanner that performs reciprocating scan with the ion beam in a first direction, a platen driving device that performs reciprocating motion of a wafer in a second direction perpendicular to the first direction, while holding the wafer so that a wafer processing surface is irradiated with the ion beam subject to the reciprocating scan, and a control device that changes a beam scan speed in the first direction and a wafer motion speed in the second direction in accordance with a beam irradiation position in the first direction and the second direction at which the wafer processing surface is irradiated with the ion beam so that ions having a desired two-dimensional non-uniform dose distribution are implanted into the wafer processing surface.