Plasma Profile Control Plate for Uniform Substrate Processing
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Solution Overview
Problem
In semiconductor manufacturing, non-uniform plasma distribution across a substrate surface leads to defects such as feature deformation and line edge roughness due to the inability of existing technologies to maintain consistent plasma coverage, especially as circuit densities increase and feature sizes decrease.
Innovation Solution
A plasma profile control plate with individually controllable unit cells is introduced in a plasma processing chamber, allowing for localized adjustment of plasma density by varying power levels across different cells, ensuring uniform plasma distribution across the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional plasma generation methods are used, then plasma can be easily ignited in processing chambers, but plasma distribution across the substrate surface becomes non-uniform
Solution Approach 1:
The plasma profile control plate is divided into multiple independently controllable unit cells, each with its own electrode assembly. This segmentation allows different regions of the substrate to receive customized plasma treatment, correcting non-uniform plasma distribution while maintaining overall system simplicity for plasma ignition.
Solution Approach 2:
Each unit cell in the plasma profile control plate can be individually powered with different power levels to create locally optimized plasma conditions. This enables precise control of plasma density and distribution across different areas of the substrate surface, addressing local non-uniformities without affecting the entire chamber.
2Area of stationary object
If plasma is generated to extend coverage, then more substrate area is processed, but edge-to-center processing uniformity deteriorates
Solution Approach 1:
The control plate's segmented electrode design enables different power levels to be applied to edge regions versus center regions of the substrate. This local quality control compensates for edge effects and maintains uniform processing conditions across the entire substrate area, regardless of size.
Solution Approach 2:
The system dynamically adjusts power distribution across different unit cells based on real-time plasma distribution requirements. This dynamic control allows the plasma field to be optimized for each specific substrate size and shape, maintaining edge-to-center uniformity while maximizing coverage area.
3Productivity
If non-uniform plasma distribution occurs, then processing can proceed, but defect formation increases
Solution Approach 1:
The plasma profile control plate incorporates sensors and control systems that monitor plasma distribution in real-time and provide feedback to the power supply system. This feedback mechanism allows continuous adjustment of power levels to each unit cell, maintaining uniform plasma conditions and preventing defect formation while keeping processing throughput high.
Solution Approach 2:
The system performs preliminary plasma conditioning by pre-adjusting power levels to each unit cell before the main processing begins. This preliminary action establishes uniform plasma distribution from the start, preventing defect formation during the actual processing while maintaining high productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution ensures uniform plasma distribution and processing results, reducing defects and enhancing the precision of feature formation in semiconductor devices by allowing for precise control of plasma density and distribution.
Implementation Method 1
individually applying different power levels to different unit cells defined in the showerhead assembly or in the plasma profile control plate, and forming plasma with different local plasma density in the unit cell having the applied power
Data Source
AI summary
The present invention provides an apparatus having a plasma profile control plate disposed in a plasma processing chamber so as to locally alter plasma density to provide uniform plasma distribution across a substrate surface during processing. In one embodiment, a process kit includes a plate configured to be disposed in a plasma processing chamber, a plurality of apertures formed therethrough, the apertures configured to permit processing gases to flow through the plate, and an array of unit cells including at least one aperture formed in the plate, wherein each unit cell has an electrode assembly individually controllable relative to electrode assemblies disposed in at least two other unit cells.