CVD Remote Plasma System Segmentation for Residue Control
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Solution Overview
Problem
In chemical vapor deposition (CVD) processes, the contamination of the remote plasma system by processing gas leads to residue formation, which reduces its working life, increases maintenance costs, and can negatively impact the deposition process, resulting in substrate contamination and higher production costs.
Innovation Solution
The CVD tool design separates the supply of cleaning gas to the remote plasma system from the processing gas to the processing chamber, using distinct gas passages and valves to control the flow, minimizing the processing gas's entry into the remote plasma system, and employs a remote plasma system to convert cleaning gas into cleaning plasma for residue removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the remote plasma system is used to clean the processing chamber, then cleaning effectiveness is improved, but processing gas contamination occurs leading to residue formation
Solution Approach 1:
The gas supply system is segmented into separate pathways: a first gas passage dedicated to supplying cleaning gas to the remote plasma system, and a second gas passage for supplying processing gas to the processing chamber. This segmentation prevents mixing of cleaning gas and processing gas, eliminating residue formation while maintaining effective cleaning through the remote plasma system.
2Productivity
If the remote plasma system operates continuously, then cleaning performance is improved, but working life is reduced due to contamination
Solution Approach 1:
The system uses separate gas passages to isolate the remote plasma system from processing gas, allowing continuous operation without contamination accumulation. This extends the working life of the remote plasma system while maintaining high cleaning performance.
Solution Approach 2:
Processing gas is extracted from the cleaning gas supply path, creating a dedicated processing gas passage that bypasses the remote plasma system. This prevents contamination of the plasma system while enabling continuous cleaning operations.
3Ease of operation
If gas flow control is simplified, then operation ease is improved, but gas mixing occurs leading to contamination
Solution Approach 1:
The gas control system is segmented into independent flow control mechanisms for cleaning gas and processing gas, each with its own passage and control valve. This provides precise control over gas flows while preventing mixing, maintaining both ease of operation and contamination prevention.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This separation effectively minimizes residue contamination in the remote plasma system, extends its operational life, reduces maintenance costs, ensures clean deposition processes, and decreases substrate scrap rates, thereby lowering production costs.
Implementation Method 1
converting the cleaning gas into the cleaning plasma by the remote plasma system
Implementation Method 2
In CVD, the wafer (substrate) is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the thin film
Data Source
AI summary
A chemical vapor deposition (CVD) tool includes a processing chamber, a remote plasma system, a first gas source, a second gas source, a first gas passage and a second gas passage. The remote plasma system is connected to the processing chamber. The first gas passage connects the first gas source, the remote plasma system and the processing chamber. The second gas passage connects the second gas source and the processing chamber, and bypasses the remote plasma system.