Covering Layer Enhances Underfill Wettability in Semiconductor Devices
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Solution Overview
Problem
The increasing integration in semiconductor devices leads to challenges in underfill injection, including prolonged injection time, void generation, and electrical breakdown due to plasma treatment, which affects the wettability and reliability of the semiconductor chip.
Innovation Solution
A covering layer with affinity for the underfill material is formed on the surfaces of the semiconductor chip and mounting board using methods like CVD or supercritical deposition, enhancing wettability without risking electrical breakdown.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If plasma treatment is applied to improve wettability, then the filling property of underfill material is improved, but electrical breakdown of the device occurs
Solution Approach 1:
A covering layer is introduced as an intermediary between the underfill material and the semiconductor chip surface. This covering layer has high affinity for the underfill material, enabling effective wettability and filling without requiring plasma treatment of the semiconductor chip itself, thus preventing electrical breakdown while achieving good filling properties.
2Productivity
If gap between board and semiconductor chip is reduced to increase integration, then device integration is improved, but injection time increases and voids are generated
Solution Approach 1:
The covering layer is applied locally on the semiconductor chip surface in the region where underfill injection occurs. This localized modification provides high affinity for underfill material specifically at the injection interface, enabling rapid and complete filling of narrow gaps without void formation, thus reducing injection time while maintaining high integration.
3Productivity
If gap between board and semiconductor chip is reduced to increase integration, then device integration is improved, but voids are generated in injected resin
Solution Approach 1:
The covering layer acts as a mediator that ensures complete wetting of the underfill material in narrow gaps. By providing high affinity surfaces, it enables the underfill to flow completely into the gap without trapping air, thus preventing void formation while maintaining the narrow gap structure required for high integration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method improves the ease of underfill injection, reduces void formation, and ensures reliable filling without electrical damage to the semiconductor device, enhancing the mechanical strength and reliability of the semiconductor device.
Implementation Method 1
A covering layer with affinity for the underfill material is formed on the surfaces of the semiconductor chip and mounting board using methods like CVD or supercritical deposition
Implementation Method 2
A covering layer with affinity for the underfill material is formed on the surfaces of the semiconductor chip and mounting board using methods like CVD or supercritical deposition
Implementation Method 3
a side-fill method utilizing capillary action is employed to inject an underfill material (filler)
Data Source
AI summary
A method of manufacturing a device includes forming a covering layer having affinity for a filler to be injected into a space between a first base and a second base, on at least one of the opposing surfaces of the first base and the second base, and then injecting the filler into the space between the first base and the second base.