Semiconductor/Solid-State Device Details TRIZ Cases

Offset stacked semiconductor chips connected via columnar electrodes reduce wiring length variation for consistent signal transmission.

Integrating inlet and outlet flanges into the cooling case eliminates external pipe attachment, reducing assembly labor and module volume.

A frame housing with a fluorinated polymer sealant creates a localized vacuum space for precise underfill injection around semiconductor chips.

Single-step encapsulation with flowable molding compound reduces processing time and cost while minimizing interposer warpage.

A ribbon-shaped sandwich structure uses silver sinter layers to join copper sheets for semiconductor electrical contacts.

Sequentially applying thin mask patterns to different regions allows simultaneous etching of stepped structures, reducing exposure time and process complexity.

Through-silicon vias link surface mount passive components directly to the die substrate, reducing footprint and signal path length compared to wire bonding.

A QFN packaging structure embeds a thermal conduction component within an insulation layer to create wettable flank surfaces.

A conductive layer covers the exposed upper surface of a semiconductor chip to provide thermal dissipation and electromagnetic interference shielding.

Segmented fabrication of the lower redistribution layer and semiconductor chip reduces via size restrictions, improving production yield.

A semiconductor apparatus uses diagonal through-vias to electrically couple stacked chips and reroute data via a transmission section.

A recessed conductive circuit layer creates an accommodating space for solder material on semiconductor substrates.

A semiconductor molding layer features an uneven upper surface with alternating recessed and protruding portions to reduce physical contact during release film detachment.

Projections on chip surfaces guide gap-fill materials via capillary action, eliminating voids in narrow inter-chip gaps.

Symmetric plate protrusion in a semiconductor package stem balances thermal expansion stresses to reduce warping below 50 μm.

Shallow trench isolation regions and semiconductor fins in the dummy fill reduce capacitive coupling while maintaining topography control.

Anisotropic heatsinks with a thermally conductive core layer dissipate heat laterally, avoiding the density and cost penalties of copper.

Resin-insulated laminated wiring minimizes inductance while metallic base plates dissipate heat, resolving thermal resistance trade-offs.

Stacked external terminals separated by insulation layers reduce board size and improve packaging efficiency while preventing electrical shorts.

A display apparatus stacks a driving panel vertically above a display panel, connecting signal lines through contact holes.

A multi-component IC package mounts dies on non-horizontal metal side walls to dissipate heat.

An integrated stiffener minimizes package bending and acts as an internal heat sink, resolving reliability trade-offs in thin substrates.

Wafer-level substrate bonding creates conductive pathways through integrated modules, enabling precise optical focusing of optoelectronic emitters.

A preformed lead frame embeds metallic connecting portions within a molding layer to enhance electrical and mechanical connections.

Segmented mold compound layers with distinct viscosities resolve the trade-off between structural stability and sensing accuracy in fingerprint modules.

A covering layer with high affinity for filler improves wettability on semiconductor chip surfaces.

A semiconductor device uses substrate conductive portions to establish electrical connections without lead frames.

A double-side mountable MEMS package uses a spacer and covers to form an enclosed acoustic housing.

Removing the foil exposes the adhesive surface, preventing overflow contamination and tool sticking during lamination.

Concurrent hole formation in sacrificial stacks eliminates alignment process windows, reducing cell size and manufacturing complexity.

Segmented via components connect lower and upper RDL interposers, reducing form factor and warpage in PoP assemblies.

Segmenting long gold bonding wires with dummy dies prevents collapse and reduces defective rates below 0.5%.

Multilayer flex interconnect structures reduce inductance effects and impedance variations by replacing wire bonding with stacked conductive layers.

A halogen-containing insulating film on gate sidewalls enables selective SiGe epitaxial growth, suppressing OFF-state leakage current.

An internal lattice structure with rigid supports resists thermal expansion mismatches between the substrate and molding element, reducing warpage.

A barrier metal layer enhances adhesive force between insulating layers and redistribution conductive patterns in semiconductor packages.

A channel protective film shields the information storage pattern during etching to reduce channel resistance.

Merging display and sensing structures on a single substrate reduces panel thickness and manufacturing costs.

Chemical mechanical polishing planarizes conductive via-holes in polymer substrates, eliminating voids and heat damage from deep reactive ion etching.

PECVD oxide and polymide passivation layers reduce leakage current in semiconductor power devices under high temperature reverse bias conditions.

Routing layer with different contact pitches connects semiconductor dies, resolving IO pitch mismatch and reducing assembly complexity.

A semiconductor lid with a protrusion surrounded by thermally conductive material resolves the trade-off between bonding strength and thermal conductivity.

Inert gas flow prevents copper wire oxidation while gold buffer balls ensure stable bonding and reduce material costs.

Asymmetric inclined through holes increase distance from substrate edges at lower surfaces to prevent crack propagation into conductive paths.

Concave-and-convex sidewall profile increases diffusion path length for mobile ions in semiconductor contact openings.

Vertical trench stacking increases capacitor density while short interconnection paths reduce serial resistance losses.

Cavity-based backside dummy plugs reduce mechanical stress on through-substrate vias while improving inter-wafer heat dissipation.

Segmented conductive tracks pivot when insulating layers are removed, establishing electrical continuity to detect intrusion attacks.

A semiconductor device uses a barrier layer between the electrode and conductive bonding material to prevent chemical reactions.