Semiconductor Package Thermal Frame for Heat Dissipation

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Semiconductor devices with high integration and miniaturization face challenges in thermal dissipation and moisture resistance, particularly in multi-chip packages where warpage and resin stress lead to inefficiencies in heat management and precision patterning.

Innovation Solution

Incorporating a frame with higher thermal conductivity than the insulation layer to surround semiconductor chips, along with a thermal dissipation layer and frame portion on the wiring layer, to enhance heat radiation and moisture resistance, while reducing resin stress and warpage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If multiple semiconductor chips are housed in one package with insulating resin, then high integration is achieved, but thermal dissipation efficiency deteriorates

Engineering Contradiction:
Improveintegration densityVSAvoidthermal dissipation efficiency
Core Design Contradiction:
Quantity of substanceVSTemperature

Solution Approach 1:

The patent employs a composite structure combining insulating resin material with a metal frame having higher thermal conductivity. The frame is embedded within the insulating layer to create a hybrid material system that simultaneously provides electrical insulation and enhanced thermal conduction pathways, resolving the contradiction between integration density and thermal dissipation efficiency

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The insulating layer is segmented by dividing it into a resin portion and a frame portion with different material properties. The frame portion acts as a separate thermal management component embedded within the insulating matrix, allowing independent optimization of insulation and heat dissipation functions

Inventive Principle:
Principle #1Segmentation

2Quantity of substance

If insulating resin is used to house semiconductor chips, then high integration is achieved, but moisture resistance deteriorates

Engineering Contradiction:
Improveintegration densityVSAvoidmoisture resistance
Core Design Contradiction:
Quantity of substanceVSObject-affected harmful factors

Solution Approach 1:

The patent creates a composite encapsulation system where the metal frame portion provides enhanced barrier properties against moisture infiltration. This composite structure combines the sealing capability of resin with the corrosion-resistant and moisture-impermeable characteristics of metal, thereby improving overall moisture resistance while maintaining high integration

Inventive Principle:
Principle #40Composite materials

3Quantity of substance

If semiconductor chips are housed in insulating resin, then high integration is achieved, but warpage occurs

Engineering Contradiction:
Improveintegration densityVSAvoidwarpage
Core Design Contradiction:
Quantity of substanceVSStability of the object's composition

Solution Approach 1:

The patent utilizes the composite structure of resin and metal frame portions to balance thermal expansion coefficients and mechanical properties. The metal frame provides structural rigidity and dimensional stability that counteracts warpage tendencies, while the resin provides flexibility and stress distribution, together maintaining package flatness under thermal and mechanical loads

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The frame portion is strategically positioned within the insulating layer at locations where structural support is most needed to prevent warpage. This localized reinforcement approach provides targeted mechanical stability without compromising the overall integration density or electrical insulation properties

Inventive Principle:
Principle #3Local quality

4Quantity of substance

If resin is used for housing semiconductor chips, then high integration is achieved, but resin stress increases

Engineering Contradiction:
Improveintegration densityVSAvoidresin stress
Core Design Contradiction:
Quantity of substanceVSStress or pressure

Solution Approach 1:

The patent segments the insulating layer into resin and frame portions, where the frame portion assumes the role of providing mechanical strength and stress distribution. This segmentation reduces the burden on the resin material, lowering resin-specific stress while maintaining the encapsulation function and high integration architecture

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Improves thermal dissipation efficiency by 15% and moisture resistance, allowing for precise patterning and increased reliability in high-temperature high-humidity tests, compared to configurations without these features.

Implementation Method 1

a frame (24) which has higher thermal conductivity than the insulation layer and surrounds the first semiconductor element (22) and the second semiconductor element (23) via the insulation layer (21)

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS8860211B2Semiconductor device, semiconductor device manufacturing method, and electronic device
Publication Date: 2014.10.14 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US8860211B2 patent drawing
  • US8860211B2 patent drawing
  • US8860211B2 patent drawing

AI summary

A semiconductor device includes an insulation layer, a first semiconductor element and a second semiconductor element which are disposed within the insulation layer, a frame which has higher thermal conductivity than the insulation layer and surrounds the first semiconductor element and the second semiconductor element via the insulation layer, and a wiring layer which is disposed over the insulation layer and includes an electrode which electrically connects the first semiconductor element and the second semiconductor element.