Semiconductor Package RDL Stacking for Signal Path Reduction

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Solution Overview

Problem

The electrical transmission path between processors and transceivers in semiconductor device packages remains long due to their juxtaposition on the same substrate, limiting the reduction of transmission rate and increasing power consumption in optical communication systems.

Innovation Solution

A semiconductor device package design featuring a redistribution layer (RDL) with the semiconductor device on one surface and the transceiver and capacitor on the opposite surface, allowing for a shorter electrical transmission path and decoupling path, thereby reducing power consumption and improving transmission efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Length of moving object

If the processor and transceiver are disposed on the same side of the substrate, then the electrical transmission path is shortened, but distance tolerance must be preserved for bonding process which prevents effective reduction of transmission path

Engineering Contradiction:
Improveelectrical transmission pathVSAvoidbonding process tolerance
Core Design Contradiction:
Length of moving objectVSEase of manufacture

Solution Approach 1:

The patent transitions from a two-dimensional planar arrangement where processor and transceiver are juxtaposed on the same substrate surface to a three-dimensional stacked arrangement. The processor is disposed on the first surface of the substrate while the transceiver is disposed on the second surface, utilizing the vertical dimension to achieve shorter electrical transmission paths without compromising bonding process tolerances.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Use of energy by stationary object

If the processor and transceiver are disposed on the same side of the substrate, then the electrical transmission path is shortened, but power consumption increases due to limited reduction of transmission path

Engineering Contradiction:
Improvepower consumptionVSAvoidelectrical transmission path
Core Design Contradiction:
Use of energy by stationary objectVSLength of moving object

Solution Approach 1:

By stacking the transceiver on the opposite surface of the substrate relative to the processor, the patent creates a vertical electrical transmission path that is significantly shorter than horizontal paths on the same surface. This dimensional change directly reduces power consumption by minimizing the length of electrical interconnects between processor and transceiver.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Length of moving object

If the transceiver and capacitor are disposed on the second surface of the RDL, then the decoupling path is shortened, but area utilization becomes constrained

Engineering Contradiction:
Improvedecoupling pathVSAvoidsubstrate area utilization
Core Design Contradiction:
Length of moving objectVSArea of stationary object

Solution Approach 1:

The patent utilizes the vertical stacking arrangement to place the capacitor on the second surface of the RDL adjacent to the transceiver. This enables the decoupling path to extend vertically through the RDL thickness rather than horizontally across the substrate, significantly shortening the decoupling path while efficiently utilizing the available substrate area.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS11296043B2Semiconductor device packages and methods of manufacturing the same
Publication Date: 2022.04.05 ADVANCED SEMICON ENG INC
  • US11296043B2 patent drawing
  • US11296043B2 patent drawing
  • US11296043B2 patent drawing

AI summary

A semiconductor device package includes a redistribution layer (RDL), a semiconductor device, a transceiver, and a capacitor. The RDL has a first surface and a second surface opposite to the first surface. The semiconductor device is disposed on the first surface of the RDL. The transceiver is disposed on the second surface of the RDL. The capacitor is disposed on the second surface of the RDL. The semiconductor device has a first projected area and the capacitance has a second projected area. The first projected area overlaps with the second projected area.