Semiconductor Lid Protrusion for Thermal Adhesion
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor manufacturing faces challenges in thermal management due to the limitations of thermal interface materials, where adhesive materials provide strong bonding but poor thermal conductivity, and metallic materials offer high conductivity but are costly and prone to manufacturing issues, leading to material wastage and increased costs.
Innovation Solution
A semiconductor structure is designed with a die, a lid, and a thermally conductive material between them, where the lid has a protrusion and the die has a recess, using a combination of metallic and polymeric materials to enhance thermal dissipation and adhesion, while minimizing manufacturing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If adhesive thermal interface materials are used, then strong bonding between die and lid is achieved, but thermal conductivity is poor
Solution Approach 1:
The patent uses a composite thermal interface material comprising a polymer matrix with embedded thermally conductive particles (such as aluminum oxide, zinc oxide, or boron nitride). This composite structure combines the strong bonding properties of polymers with the high thermal conductivity of ceramic particles, resolving the contradiction between adhesion strength and thermal conductivity.
2Loss of energy
If metallic thermal interface materials are used, then high thermal conductivity is achieved, but manufacturing cost increases and manufacturing issues arise
Solution Approach 1:
The patent replaces expensive metallic thermal interface materials with cost-effective polymer-based composite materials that achieve sufficient thermal conductivity through embedded particles. This substitution reduces material costs and simplifies manufacturing processes while maintaining acceptable thermal performance for the application.
Solution Approach 2:
The patent concentrates thermally conductive particles in specific regions where heat transfer is most critical, rather than using expensive metallic materials throughout the entire interface. This localized approach optimizes thermal conductivity where needed while minimizing overall material cost and manufacturing complexity.
3Productivity
If stacked chip structure is used for WLP and CoWoS technology, then device integration is improved, but heat dissipation becomes more difficult due to high power density
Solution Approach 1:
The patent introduces a thermally conductive adhesive material as an intermediary between the stacked chips and the heat sink lid. This intermediary material facilitates efficient heat transfer from the high-power-density stacked chips to the cooling structure, enabling effective thermal management in integrated multi-chip packages.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves thermal dissipation and adhesion between the die and lid, effectively managing heat transfer while reducing manufacturing costs by utilizing a combination of materials that offer both strong bonding and high thermal conductivity.
Implementation Method 1
a thermally conductive material disposed between the die and the lid
Implementation Method 2
the lid includes a protrusion protruded towards the surface of the die... improves thermal dissipation and adhesion between the die and lid
Data Source
AI summary
A semiconductor structure includes a die including a surface, a lid disposed over the surface of the die, and a thermally conductive material disposed between the die and the lid, wherein the lid includes a protrusion protruded towards the surface of the die and the thermally conductive material surrounds the protrusion. Also, a method of manufacturing a semiconductor structure includes providing a die including a surface, providing a lid, removing a portion of the lid to form a protrusion, disposing a thermally conductive material between the surface of the die and the lid, wherein the protrusion of the lid is surrounded by the thermally conductive material. Further, an apparatus for manufacturing a semiconductor structure and a method of manufacturing a semiconductor structure by the apparatus are disclosed.