Crenellated IC Metal Trace Layout for Lower Parasitics

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Solution Overview

Problem

Current integrated circuit (IC) designs face challenges in 3D transistor fabrication, particularly in maintaining optimal end-to-end spacing and overlap between metal interconnect traces, which affects device performance and complexity in patterning processes.

Innovation Solution

The implementation of a crenellated metal trace layout, where adjacent metal traces are laterally staggered by the dimension of an intervening trace, addresses these challenges by relaxing pitch constraints and improving device parametrics, such as reducing parasitics and increasing via overlap.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional parallel metal trace layout is used, then routing simplicity is maintained, but end-to-end spacing and overlap between traces cannot be optimized, leading to increased parasitics and reduced device performance

Engineering Contradiction:
Improvedevice performanceVSAvoidtrace layout complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies asymmetry by laterally staggering adjacent metal traces relative to each other, creating an asymmetric crenellated pattern instead of using symmetric parallel traces. This staggering offsets trace ends by at least one trace width, optimizing end-to-end spacing and reducing parasitic coupling while maintaining routing effectiveness.

Inventive Principle:
Principle #4Asymmetry

Solution Approach 2:

The patent creates a crenellated trace layout where traces have a serrated or tooth-like pattern rather than straight parallel lines. This geometric transformation optimizes the spatial arrangement of traces to achieve better end-to-end spacing and overlap characteristics, reducing parasitic effects.

Inventive Principle:
Principle #14Spheroidality (Curvature)

2Area of stationary object

If metal traces are closely spaced to increase density, then area utilization improves, but parasitic coupling between traces increases, degrading signal integrity

Engineering Contradiction:
Improvearea utilizationVSAvoidparasitic coupling
Core Design Contradiction:
Area of stationary objectVSObject-generated harmful factors

Solution Approach 1:

By laterally staggering adjacent traces in a crenellated pattern, the patent creates asymmetric spacing that optimizes both density and parasitic reduction. The offset arrangement ensures that trace ends do not align, reducing capacitive coupling while maintaining close spacing for area efficiency.

Inventive Principle:
Principle #4Asymmetry

Solution Approach 2:

The crenellated layout applies different spatial relationships to different segments of adjacent traces. Rather than uniform parallel spacing, each trace segment is positioned to optimize local end-to-end spacing, reducing parasitic coupling in critical regions while maintaining overall density.

Inventive Principle:
Principle #3Local quality

3Reliability

If standard cell library uses conventional layouts, then fabrication process independence is maintained, but 3D transistor fabrication benefits are lost, reducing device performance

Engineering Contradiction:
Improvedevice performanceVSAvoidfabrication process adaptability
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent transitions from conventional 2D parallel trace layouts to a crenellated 3D-like arrangement where traces are staggered in the lateral dimension. This dimensional enhancement optimizes spacing and overlap characteristics for 3D transistor fabrication, improving device performance while maintaining standard cell library compatibility.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS11996362B2Integrated circuit device with crenellated metal trace layout
Publication Date: 2024.05.28 INTEL CORP
  • US11996362B2 patent drawing
  • US11996362B2 patent drawing
  • US11996362B2 patent drawing

AI summary

Integrated circuit (IC) cell architectures including a crenellated interconnect trace layout. A crenellated trace layout may be employed where an IC cell includes transistor having a source/drain terminal interconnected through a back-side (3D) routing scheme that reduces front-side routing density for a given transistor footprint. In the crenellated layout, adjacent interconnect traces or tracks may have their ends staggered according to a crenellation phase for the cell. Crenellated tracks may intersect one cell boundary with adjacent tracks intersecting an opposite cell boundary. Track ends may be offset by at least the width of an underlying orthogonal interconnect trace. Crenellated track ends may be offset by the width of an underlying orthogonal interconnect trace and half a spacing between adjacent orthogonal interconnect traces.