Cross-line Structure Mask Compensation for Display Panel Etching
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Solution Overview
Problem
In display panel manufacturing, jumper overlap issues lead to uneven membrane thickness and photoresist thinning, causing signal transmission abnormalities due to etching and acid exposure, particularly at ramp angles where the upper layer lead layer is thinner and more prone to breakage.
Innovation Solution
A method involving a substrate with a buffer layer, sequential deposition of conductive and photoresist substances, and mask compensation to ensure the width of overlapping conductive layers is greater than non-overlapping portions, using etched photoresist as a barrier layer to maintain even thickness and prevent wire breaks during etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photoresist plating is performed after upper layer lead layer plating, then the photoresist provides leveling effect, but the photoresist thickness becomes uneven at ramp angles causing slender photoresist and potential breakage
Solution Approach 1:
The patent applies preliminary action by depositing the upper layer lead layer with controlled thickness before photoresist plating, and using mask pattern compensation in advance to account for the ramp angle geometry. This ensures that even though the photoresist will be thinner at ramp angles, the mask pattern is pre-adjusted to provide adequate coverage and prevent photoresist breakage during etching.
2Shape
If the upper layer lead layer is plated at ramp angle, then the lead layer conforms to the lower layer geometry, but the membrane thickness becomes thinner making it prone to etching damage
Solution Approach 1:
The patent applies local quality by differentiating the lead layer thickness requirements across different regions. The upper layer lead layer is deposited with non-uniform thickness - thinner at ramp angles and thicker at planar portions. This local variation compensates for the etching effects and ensures adequate lead layer protection throughout the structure.
Solution Approach 2:
The patent changes the deposition parameters of the upper layer lead layer to control its thickness profile. By adjusting deposition conditions, the lead layer thickness is optimized at different locations - particularly ensuring sufficient thickness at ramp angles to prevent etching damage while maintaining conformality to the lower layer structure.
3Measurement precision
If mask pattern is used for etching, then precise patterning is achieved, but the photoresist at thin portions becomes slender and may break during etching
Solution Approach 1:
The patent applies asymmetry through mask pattern compensation where the mask pattern is deliberately designed with asymmetric dimensions. The mask pattern width is increased at portions corresponding to ramp angles where the photoresist is thinner, providing additional mechanical support and preventing photoresist breakage while maintaining precise patterning control.
4Ease of manufacture
If acid etching is performed, then the conductive layers are patterned, but the thinner upper layer lead layer at ramp angles is excessively etched becoming slender
Solution Approach 1:
The patent applies beforehand cushioning by ensuring the upper layer lead layer has sufficient thickness at ramp angles before etching begins. The lead layer is deposited with enhanced thickness at these critical locations to cushion against the etching effect, preventing excessive etching and maintaining adequate lead layer dimensions after pattern transfer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively addresses the uneven thickness and etching issues, reducing the likelihood of signal transmission abnormalities by maintaining consistent conductive layer thickness and preventing wire breaks, thereby enhancing panel quality.
Implementation Method 1
the buffer layer is configured to block impurities contained in the substrate from migrating to the first metal layer
Implementation Method 2
depositing a second conductive substance and a photoresist substance sequentially on the first conductive layer
Implementation Method 3
a pattern of the mask is compensated so that a width of an overlapping portion of the second conductive layer with the first conductive layer is greater than or equal to that of a non-overlapping portion
Data Source
AI summary
A method for manufacturing a cross-line structure includes the steps of etching to obtain a first conductive layer, depositing a second conductive material and a photoresist material on the first conductive layer, and removing the part of the photoresist material on a position where a second conductive layer is not required by means of a photomask. The method further includes the steps of etching the second conductive material, obtaining the second conductive layer, and performing compensation on a photomask graphic so that the width of an overlap portion of the second conductive layer with the first conductive layer is greater than or equal to the width of the portion of the second conductive layer that does not overlap the first conductive layer.