Cross-Shaped 3D Hall Sensor Structure for High-Temperature Sensing
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Solution Overview
Problem
Existing Hall sensors made from traditional semiconductor materials like Si, GaAs, InSb, and InAs cannot operate reliably in environments exceeding 150°C due to small bandgaps and limited temperature tolerance, leading to performance issues in high-temperature applications such as downhole equipment and spacecraft, and three-dimensional measurements face challenges with large size, complex wiring, and inconsistent sensitivity across directions.
Innovation Solution
A cross-shaped high-temperature three-dimensional Hall sensor fabricated with third-generation semiconductor materials like GaN, SiC, and ZnO, integrated in three directions with a minimal number of electrodes, enabling consistent sensitivity and reduced offset voltage across all directions, and a simplified manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional semiconductor materials (Si, GaAs, InSb, InAs) are used to fabricate Hall sensors, then the manufacturing process is simple and cost-effective, but the sensors cannot operate reliably in environments exceeding 150°C due to small bandgaps and limited temperature tolerance
Solution Approach 1:
The patent changes the fundamental material parameter (bandgap) by transitioning from traditional narrow-bandgap semiconductors to wide-bandgap semiconductors (GaN, SiC, ZnO). This parameter change enables the sensor to operate at temperatures above 400°C while maintaining reliability, as the wider bandgap prevents thermal excitation of charge carriers that would otherwise degrade performance at high temperatures.
Solution Approach 2:
The patent employs composite material structures by integrating third-generation semiconductor materials with specific electrode configurations and cross-shaped geometries. This composite approach combines the high-temperature stability of wide-bandgap materials with optimized structural designs to achieve both reliability and manufacturability in harsh environments.
2Measurement precision
If multiple Hall sensors are encapsulated using packaging technology to measure three-dimensional magnetic fields, then consistent sensitivity in all three directions is achieved, but the sensor volume increases and encapsulation precision requirements become higher
Solution Approach 1:
The patent merges three separate Hall sensing functions into a single integrated device by fabricating three cross-shaped sensing elements in different orientations (X, Y, Z directions) within one sensor substrate. This integration allows three-dimensional magnetic field measurement while reducing the overall sensor volume compared to encapsulating three separate sensors, and eliminates the need for high-precision encapsulation processes.
Solution Approach 2:
The patent transitions from planar two-dimensional sensor arrangements to a three-dimensional integrated structure by incorporating sensing elements oriented along all three spatial axes within a single device. This dimensional integration enables simultaneous measurement of magnetic field components in X, Y, and Z directions without requiring multiple discrete sensors or complex encapsulation.
3Volume of stationary object
If horizontal and vertical Hall sensors are integrated to reduce sensor size, then the sensor volume decreases, but the wiring becomes complex and sensitivity consistency across directions deteriorates
Solution Approach 1:
The patent creates a universal sensor structure where the cross-shaped Hall sensing element can detect magnetic fields in multiple directions (X, Y, Z axes) through appropriate orientation and electrode configuration. This multi-functional design eliminates the need for separate horizontal and vertical sensors with different wiring schemes, simplifying the overall wiring complexity while maintaining compact volume.
Solution Approach 2:
The patent employs homogeneous cross-shaped sensing structures for all three measurement directions, ensuring identical geometric and electrical characteristics across X, Y, and Z axis sensors. This homogeneity guarantees consistent sensitivity and temperature coefficients in all directions, avoiding the sensitivity inconsistency problems that arise from integrating different horizontal and vertical sensor types.
4Adaptability or versatility
If at least three Hall sensors are used for three-dimensional magnetic field measurement, then measurement coverage is improved, but the number of leads increases and encapsulation difficulty increases
Solution Approach 1:
The patent combines three Hall sensing functions into a single integrated device with shared substrate and interconnected electrode structures. This merging reduces the total number of external leads required compared to three separate sensors, and eliminates the need for complex three-dimensional encapsulation processes while maintaining full three-dimensional magnetic field measurement capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The sensor operates stably above 400°C, reduces sensor size, simplifies wiring, and ensures consistent performance and sensitivity in all three dimensions, facilitating high-temperature applications in confined spaces.
Implementation Method 1
Hall sensors are the most widely used and market-dominant type of magnetic sensors. They are capable of measuring the magnitude of the magnetic field and other related physical quantities
Data Source
AI summary
A cross-shaped high-temperature three-dimensional Hall sensor includes the X column, the Y column and the Z column all made of third-generation semiconductor materials. The X column, the Y column and the Z column are vertically connected to each other. An electrode C1 and an electrode C2 are respectively arranged at two ends of the Z column. An electrode C3 and an electrode C4 are respectively arranged at two sides of the Y column. An electrode C5 and an electrode C6 are respectively arranged at two sides of the X column. The current description uses the excellent high temperature performance of the third generation semiconductor to make the sensor work in the high temperature environment, the new structure greatly reduces the volume compared with the other device packaging combined Hall sensor, and makes the sensor work in very narrow space.