Cross-Shaped High-Temperature 3D Hall Sensor for Compact Spaces
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Solution Overview
Problem
Traditional Hall sensors made from materials like Si, GaAs, InSb, and InAs cannot operate reliably in environments exceeding 150°C due to small bandgaps and limited temperature tolerance, leading to performance issues in high-temperature applications, and existing three-dimensional Hall sensors face challenges such as large size, complex wiring, and inconsistent performance across directions.
Innovation Solution
A cross-shaped Hall sensor fabricated with third-generation semiconductor materials like GaN, SiC, or ZnO, integrated in three directions with a minimal number of electrodes, enabling consistent sensitivity and reduced offset voltage across all directions, and a simplified manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional semiconductor materials (Si, GaAs, InSb, InAs) are used to fabricate Hall sensors, then the manufacturing process is mature and cost-effective, but the sensors cannot operate reliably in environments exceeding 150°C due to small bandgaps and limited temperature tolerance
Solution Approach 1:
The patent changes the fundamental material parameter (bandgap) by transitioning from traditional narrow-bandgap semiconductors to third-generation wide-bandgap semiconductors. This parameter change enables the sensor to operate reliably at temperatures exceeding 400°C, directly resolving the high-temperature reliability issue while expanding the operational temperature range.
Solution Approach 2:
The patent employs third-generation semiconductor materials (GaN, SiC, ZnO, diamond) which are composite material solutions with superior thermal stability and wider bandgaps compared to traditional materials. These composite material properties enable reliable operation in extreme high-temperature environments where traditional materials fail.
2Measurement precision
If multiple horizontal or vertical Hall sensors are encapsulated to achieve three-dimensional magnetic field measurement, then the sensitivity consistency across directions is improved, but the sensor volume increases and the encapsulation complexity increases
Solution Approach 1:
The patent merges three separate measurement functions (X, Y, Z direction magnetic field detection) into a single integrated cross-shaped sensor device. The four arms of the cross structure each detect magnetic fields in different directions, combining multiple sensing capabilities into one compact unit, thereby reducing overall sensor volume while maintaining sensitivity consistency.
Solution Approach 2:
The patent transitions from planar two-dimensional sensor structures to a three-dimensional cross-shaped configuration with arms extending in multiple spatial dimensions. This dimensional transformation enables simultaneous detection of magnetic fields in three orthogonal directions within a compact volume, improving sensitivity consistency without significantly increasing sensor size.
3Volume of stationary object
If horizontal and vertical Hall sensors are integrated to reduce sensor size, then the sensor volume is reduced, but the wiring complexity increases and the sensitivity consistency across directions deteriorates
Solution Approach 1:
The cross-shaped sensor structure serves multiple functions simultaneously: each of the four arms can detect magnetic fields in different directions, and the same structural elements serve both mechanical support and electrical sensing functions. This multi-functionality reduces the need for separate wiring systems for each sensing direction, thereby reducing wiring complexity while maintaining compact size.
4Ease of manufacture
If traditional semiconductor materials are used, then the manufacturing process is simple and cost-effective, but the scattering mechanisms significantly impact performance in high-temperature settings, rendering sensors unable to function properly
Solution Approach 1:
The patent changes the fundamental material parameter (bandgap) by transitioning from traditional narrow-bandgap semiconductors to third-generation wide-bandgap semiconductors. This parameter change enables the sensor to operate reliably at temperatures exceeding 400°C, directly resolving the high-temperature reliability issue while expanding the operational temperature range.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The cross-shaped sensor operates stably above 400°C, reduces sensor size, simplifies wiring, and ensures consistent performance and sensitivity across three dimensions, facilitating high-temperature applications in compact spaces.
Implementation Method 1
Hall sensors are the most widely used and market-dominant type of magnetic sensors. They are capable of measuring the magnitude of the magnetic field and other related physical quantities
Data Source
AI summary
A cross-shaped high-temperature three-dimensional Hall sensor includes the X column, the Y column and the Z column all made of third-generation semiconductor materials. The X column, the Y column and the Z column are vertically connected to each other. An electrode C1 and an electrode C2 are respectively arranged at two ends of the Z column. An electrode C3 and an electrode C4 are respectively arranged at two sides of the Y column. An electrode C5 and an electrode C6 are respectively arranged at two sides of the X column. The current description uses the excellent high temperature performance of the third generation semiconductor to make the sensor work in the high temperature environment, the new structure greatly reduces the volume compared with the other device packaging combined Hall sensor, and makes the sensor work in very narrow space.