Cryogenic Racetrack Memory Using Triplet Supercurrents

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Solution Overview

Problem

Existing non-volatile memories, such as MRAM and RTM, consume significant energy due to the generation of spin currents, and quantum computing faces challenges in scaling up qubits due to heat load and latency issues, while conventional superconductors are incompatible with magnetism.

Innovation Solution

A racetrack memory device using triplet supercurrents, composed of a ferrimagnetic or ferromagnetic racetrack and a superconducting shift element, utilizes non-centrosymmetric or proximitized superconductors to move magnetic domain walls with minimal energy consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If conventional superconductors are used to reduce energy consumption, then energy efficiency improves, but magnetism compatibility deteriorates

Engineering Contradiction:
Improveenergy consumptionVSAvoidmagnetism compatibility
Core Design Contradiction:
Use of energy by moving objectVSAdaptability or versatility

Solution Approach 1:

The patent employs a composite structure consisting of a superconducting material layer and a ferromagnetic material layer. The superconducting layer provides dissipationless current flow for energy efficiency, while the ferromagnetic layer supplies the necessary magnetism for domain wall manipulation. This composite arrangement allows the system to simultaneously achieve low energy consumption and magnetic functionality.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent introduces a spin scattering mechanism as an intermediary that couples the superconducting and ferromagnetic layers. Spin-polarized electrons from the ferromagnetic layer scatter off magnetic impurities in the superconducting layer, generating spin currents that drive domain wall motion. This intermediary mechanism enables energy-efficient spin current generation without requiring direct magnetic ordering in the superconductor.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If thermal fluctuations are used for MRAM operation, then device operation improves, but low temperature performance deteriorates

Engineering Contradiction:
Improvedevice operationVSAvoidlow temperature performance
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The patent replaces thermal fluctuation-driven mechanisms with a quantum mechanical spin scattering mechanism. Instead of relying on thermal agitation to enable magnetic switching, the system uses spin-polarized electron transport and spin-orbit coupling effects that remain effective at low temperatures. This substitution allows reliable operation in cryogenic environments where thermal fluctuations are suppressed.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

3Power

If electrical currents are used to generate spin currents, then spin current generation improves, but energy consumption increases

Engineering Contradiction:
Improvespin current generationVSAvoidenergy consumption
Core Design Contradiction:
PowerVSUse of energy by moving object

Solution Approach 1:

The patent exploits the phase transition of the superconducting material from normal state to superconducting state. In the superconducting phase, electrons form Cooper pairs that can scatter off magnetic impurities to generate spin currents with zero electrical resistance. This phase transition enables spin current generation without Joule heating, dramatically reducing energy consumption compared to conventional electrical current-driven approaches.

Inventive Principle:
Principle #36Phase transitions

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Achieves low-energy, high-density, non-volatile data storage with reduced Joule heat dissipation, enabling integration with cryo-CMOS for quantum circuits and scalable qubits.

Implementation Method 1

A racetrack memory device using triplet supercurrents, composed of a ferrimagnetic or ferromagnetic racetrack and a superconducting shift element

Methodology Applied
Scientific EffectSuperconductivity: Superconductivity

Implementation Method 2

the generation and application of spin currents, via the spin angular momentum that they carry, to manipulate magnetic moments

Methodology Applied
Scientific EffectSpin current:

Implementation Method 3

cause the motion of chiral domain walls in magnetic nanowires

Methodology Applied
Scientific EffectDomain wall motion:

Implementation Method 4

a conventional superconducting material in proximity to a triplet converting material which converts the Cooper pairs of the conventional superconducting material into the triplet state

Methodology Applied
Scientific EffectCooper pair conversion:

Implementation Method 5

One of the most unusual properties of superconductors is the dissipationless flow of supercurrents, i.e. no (or little) energy is consumed in passing current through superconducting materials

Methodology Applied
Scientific EffectDissipationless current flow:

Data Source

PatentUS20250287607A1Energy efficient non-volatile cryogenic memory - supertrack
Publication Date: 2025.09.11 MAX PLANCK GESELLSCHAFT ZUR FOERDERUNG DER WISSENSCHAFTEN EV
  • US20250287607A1 patent drawing

AI summary

The invention relates to an energy efficient non-volatile cryogenic memory (SUPERTRACK) which includes:a ferrimagnetic, ferromagnetic or synthetic antiferromagnetic racetrack (RT); anda superconducting shift element in proximity to the RT to move magnetic bits along the RT,wherein the superconducting shift element isa non-centrosymmetric superconductor, oris composed ofa conventional superconducting material in proximity toa triplet converting material which converts the Cooper pairs of the conventional superconducting material into the triplet state, which material is selected from.Mn3X; X=Ge, Sn, Pb or Mn3XN, X=S, Ni, Ir.Moreover, the invention relates to a method of manufacturing the memory and its use.