Cryostat Socket with Lateral Heat Spreading for Ion Trap Devices
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Solution Overview
Problem
Ion trap devices for quantum computing in cryogenic environments face challenges with increased size and power dissipation, requiring improved cryostat socket designs for efficient heat removal and safe, fast device changes, while minimizing exposure to electrostatic potentials and contamination.
Innovation Solution
A cryostat socket design featuring a frame with a heat removal surface thermally coupled to a device carrier, where a cover exerts compressive force to enhance thermal conductivity and a micro-fabricated ion trap device is mounted on a device carrier that spreads heat from the inner to the outer region, with a spring pin insert for reliable electrical contact and a metal mesh for stray charge shielding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the ion trap device increases in size to control more ions, then the number of controllable ions increases, but the heat dissipation requirement increases and thermal management becomes more difficult
Solution Approach 1:
The device carrier is divided into laterally inner and outer regions with distinct thermal functions. The inner region houses the ion trap device while the outer region serves as a heat sink area, segmenting the thermal management zones to efficiently handle heat from multiple electrodes
Solution Approach 2:
The patent introduces lateral heat spreading in the plane of the device carrier, transitioning from purely vertical heat removal to two-dimensional thermal management. This lateral heat distribution to the outer region enhances cooling capacity without increasing vertical space
2Adaptability or versatility
If the number of trap electrodes increases to control more ions, then the ion control capability increases, but the power dissipation increases
Solution Approach 1:
The device carrier is segmented into functional zones: the inner region for ion trap electrodes and the outer region for heat dissipation. This segmentation allows multiple high-power electrodes to be accommodated while distributing their thermal load to dedicated heat sink areas
Solution Approach 2:
The device carrier acts as an intermediary thermal management component between the power-dissipating ion trap electrodes and the cryostat socket. It spreads heat laterally from the inner electrode region to the outer region, mediating the thermal transition
3Ease of operation
If the ion trap device is installed overhead in confined spaces, then the installation follows conventional practice, but the device change process becomes complicated and time-consuming
Solution Approach 1:
The socket and device carrier are designed with complementary mating features including guide pins and recesses that create a self-aligning, level installation interface. This equipotential design simplifies the overhead installation process and enables rapid device changes without complex alignment procedures
4Temperature
If the cryostat socket design is optimized for heat removal, then the thermal performance improves, but the device complexity increases
Solution Approach 1:
The device carrier serves multiple functions simultaneously: it provides mechanical support for the ion trap device, acts as a heat spreader from inner to outer regions, and interfaces with both the socket and cryostat head. This multi-functionality reduces the need for separate specialized components, managing complexity while maintaining thermal performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design improves heat removal efficiency, facilitates safe and rapid ion trap device changes, and reduces exposure to electrostatic potentials, enhancing the performance and scalability of ion trap devices in cryogenic environments.
Implementation Method 1
The device carrier is configured to spread heat produced by the ion trap device from the laterally inner region to the laterally outer region
Implementation Method 2
a cover configured to exert a compressive force on the front side of the device carrier when assembled with the frame, by which the rear side of the device carrier is thermally coupled to the heat removal surface
Data Source
Figure 1~3A
Figure 3B~3D
Figure 3E~5
AI summary
A cryostat socket for holding an ion trap device mounted on a substrate in a cryostat comprises a frame having a heat removal surface configured to be thermally coupled to a laterally outer region of the device carrier. The cryostat socket further comprises a cover configured to exert a compressive force on the front side of the device carrier when assembled with the frame, by which the rear side of the device carrier is thermally coupled to the heat removal surface.