Crystal Growth Feedback Control for Temperature and Pulling Speed

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Solution Overview

Problem

Current crystal growth processes face challenges in accurately controlling crystal growth parameters, such as temperature and pulling speed, which affect the quality of the crystal and the performance of devices made from them.

Innovation Solution

A method and system that continuously monitor actual crystal parameters in real-time, compare them to reference parameters, and adjust temperature and pulling speed accordingly, using a control system that includes processors, storage, and sensors to manage the crystal growth process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If manual control methods are used for crystal growth parameters, then the device complexity is reduced, but the manufacturing precision and quality of the crystal deteriorate

Engineering Contradiction:
Improvecrystal growth parameter control precisionVSAvoidcontrol system complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent implements a closed-loop feedback control system that continuously monitors actual crystal growth parameters (mass, diameter, height, shape) and compares them with reference parameters. Based on the deviations detected, the system automatically adjusts temperature and pulling speed in real-time, ensuring precise control of crystal growth while maintaining a manageable control architecture through modular sensor integration and parameter comparison mechanisms.

Inventive Principle:
Principle #23Feedback

2Manufacturing precision

If real-time monitoring and adjustment systems are implemented, then the manufacturing precision of crystal growth is improved, but the device complexity and cost increase

Engineering Contradiction:
Improvecrystal quality consistencyVSAvoidcontrol system structure
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The control system operates autonomously by automatically detecting deviations between actual and reference crystal parameters, calculating appropriate adjustments, and executing temperature and pulling speed modifications without continuous human intervention. This self-regulating mechanism maintains high crystal quality consistency while reducing the need for complex manual control interfaces and extensive operator training.

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The patent replaces manual mechanical control operations with automated electronic control systems that use sensors, processors, and actuators to adjust crystal growth parameters. This substitution eliminates the need for complex manual adjustment mechanisms and enables more precise, repeatable control of temperature and pulling speed through electronic feedback loops.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

3Manufacturing precision

If frequent parameter adjustments are made during crystal growth, then the manufacturing precision is improved, but the productivity and growth speed may be reduced

Engineering Contradiction:
Improvecrystal parameter accuracyVSAvoidcrystal growth speed
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The control system implements periodic monitoring and adjustment cycles, measuring crystal growth parameters at regular intervals and making controlled adjustments to temperature and pulling speed. This periodic approach maintains high parameter accuracy by detecting and correcting deviations before they accumulate, while minimizing disruptions to the overall growth process and maintaining efficient production rates.

Inventive Principle:
Principle #19Periodic action

Data Source

PatentUS12188146B2Methods and systems for controlling crystal growth
Publication Date: 2025.01.07 MEISHAN BOYA ADVANCED MATERIALS CO LTD
  • US12188146B2 patent drawing
  • US12188146B2 patent drawing
  • US12188146B2 patent drawing

AI summary

The embodiments of the present disclosure disclose a method for controlling crystal growth. The method includes: obtaining an actual crystal parameter in a target time slice; obtaining a reference crystal parameter in the target time slice; determining a temperature control parameter based on the actual crystal parameter and the reference crystal parameter; determining a pulling control parameter based on the actual crystal parameter and the reference crystal parameter; and adjusting a temperature and a pulling speed in a next time slice after the target time slice respectively based on the temperature control parameter and the pulling control parameter.