Polycrystalline Material Growth TRIZ Cases
- SiC Epitaxy Gas Supply Layout for Uniform Impurity Distribution
Dual C/Si gas zones and substrate rotation improve n-type impurity uniformity in SiC epitaxial films and stabilize resistance distribution.
- CsPbX3 Single-Crystal Photodetectors for High-Resolution Radiation Sensing
CsPbX3 single crystals with metal electrodes improve charge collection and energy resolution in gamma and nuclear radiation detectors.
- Stepped Semiconductor Substrate for Ge-on-Si Dislocation Control
Stepped Si surface protrusions confine lattice-mismatch dislocations during Ge growth, cutting threading defects on large substrates.
- SiC Epitaxial Wafer Bevel Geometry for Low Edge Dislocation Density
Bevel slope width is matched to thick SiC epitaxial growth to suppress outer edge interface dislocations and improve wafer reliability.
- β-Ga2O3 Crystal Laminate Doping via HVPE Epitaxial Growth
HVPE epitaxial growth enables β-Ga2O3 crystal laminates with uniform dopant incorporation, broad concentration control, and high crystallinity.
- Wafer Laser Scanning for Uniform Modified Layer Depth
Intermittent multi-scan laser paths reduce modified layer depth variation, improving wafer separation and cutting material loss.
- Direct Ceramic 3D Printing via Solvated Electron Reduction
UV-excited negative electron affinity nanoparticles reduce halogenated feedstock to directly print ceramics at room temperature without binders or kiln shrinkage.
- Crystal Growth ML Monitoring for Yield and Defect Root-Cause Analysis
Continuous sensor data and machine learning cut crystal growth trial-and-error by predicting defects, process trends, and parameter adjustments.