Crystallized IZO Transparent Electrode for UV Light Emission
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Solution Overview
Problem
Gallium nitride compound semiconductor light-emitting devices face challenges in achieving high emission power for ultraviolet light due to absorption by traditional transparent electrodes, such as ITO films, which reduce transmittance in the ultraviolet wavelength range.
Innovation Solution
A semiconductor light-emitting device with a crystallized IZO film transparent electrode is manufactured by forming an amorphous IZO film on a p-type semiconductor layer and undergoing an annealing process in a mixed gas atmosphere of N2 and H2, increasing transmittance in the ultraviolet range and reducing light absorption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If transparent electrode absorbs ultraviolet light, then electrical conductivity is maintained, but emission power of ultraviolet light deteriorates
Solution Approach 1:
The patent changes the material composition parameters by using IZO with optimized ZnO content (1-20 mass%) and controlling the amorphous/crystalline state through annealing temperature (500-900°C). These parameter changes reduce ultraviolet absorption while maintaining sufficient electrical conductivity, thereby increasing ultraviolet emission power.
Solution Approach 2:
The patent utilizes phase transition by annealing the amorphous IZO film at 500-900°C to transform it into a crystallized state. This phase transition modifies the material's optical absorption characteristics, reducing ultraviolet light absorption while preserving electrical conductivity, thus resolving the contradiction between conductivity and emission power.
2Ease of manufacture
If amorphous IZO film is used, then manufacturing process is simplified, but ultraviolet light transmittance deteriorates
Solution Approach 1:
The patent applies preliminary action by performing annealing treatment at 500-900°C after film formation to crystallize the IZO. This preliminary crystallization step, done before device assembly, improves ultraviolet transmittance while the base film formation process remains simple and compatible with existing manufacturing techniques.
Solution Approach 2:
The patent exploits phase transition from amorphous to crystalline state through controlled annealing at 500-900°C. This phase transition enhances ultraviolet light transmittance by reducing absorption, while the process remains manufacturable as it uses standard thermal treatment equipment and temperature ranges suitable for semiconductor processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of a crystallized IZO film as a transparent electrode enhances ultraviolet light emission power by minimizing absorption, resulting in improved emission characteristics for semiconductor light-emitting devices and lamps.
Implementation Method 1
performing an annealing process at a temperature in the range of 500°C to 900°C to change the amorphous IZO film into a crystallized IZO film
Implementation Method 2
change the amorphous IZO film into a crystallized IZO film
Data Source
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AI summary
The present invention provides a semiconductor light-emitting device capable of effectively emitting ultraviolet light and a method of manufacturing the same. A semiconductor light-emitting device 1 includes: a p-type semiconductor layer 14; a semiconductor layer that has an emission wavelength in at least an ultraviolet range; and a transparent electrode 15 that is formed on the p-type semiconductor layer 14. The transparent electrode 15 includes a crystallized IZO film.