Solid-Phase Cu-Ag Bonding Structure for High-Power Semiconductor Joining
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving reliable and efficient bonding between semiconductor elements and conductive substrates, particularly in high-power applications where thermal and electrical conductivity are critical.
Innovation Solution
A bonding structure that utilizes a multi-layered bonding member with specific metal compositions and solid-phase bonding techniques to connect semiconductor elements to a conductive substrate, which includes a support substrate with insulating and metal layers, ensuring strong and durable connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If solid-phase diffusion bonding of Ag-containing metal layers is used to bond conductive member and support member, then bonding strength is improved, but manufacturing complexity increases due to multiple metal layer deposition steps
Solution Approach 1:
The bonding structure is divided into distinct functional layers: a Cu-containing metal layer for bonding, an intermediate layer for diffusion control, and an Ag-containing metal layer for thermal/electrical conductivity. This segmentation allows each layer to be optimized independently for its specific function while simplifying the overall manufacturing process by clearly defining deposition sequences and parameters for each layer.
Solution Approach 2:
The patent employs a composite metal layer structure combining Cu, Ag, and intermediate materials. The Cu-containing layer provides bonding capability, the Ag-containing layer provides thermal and electrical conductivity, and the intermediate layer controls diffusion. This composite approach achieves superior bonding strength and functional performance while managing the complexity through standardized layer configurations.
2Reliability
If multiple metal layers with specific compositions are deposited to achieve optimal bonding and conductivity, then thermal and electrical conductivity are improved, but manufacturing time increases
Solution Approach 1:
The Cu-containing metal layer is deposited first as a preliminary bonding layer before the Ag-containing layer is added. This preliminary action establishes the bonding interface with the conductive substrate, allowing subsequent Ag layer deposition to focus solely on enhancing thermal and electrical conductivity without compromising the bonding process, thereby optimizing the sequence to reduce total manufacturing time.
Solution Approach 2:
The patent specifies precise thickness parameters for each metal layer (Cu-containing layer: 1-10 μm, Ag-containing layer: 1-20 μm) and controls deposition rates and annealing temperatures. By optimizing these parameters, the manufacturing process achieves the required thermal and electrical conductivity with minimal layer thicknesses, reducing the number of deposition cycles and overall manufacturing time while maintaining high reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed bonding structure enhances thermal and electrical conductivity, providing a robust and reliable connection that withstands temperature cycling, thereby improving the performance and durability of semiconductor devices in high-power applications.
Implementation Method 1
The conductive member and the support member are bonded together by solid-phase diffusion bonding of the first metal layer and the second metal layer
Data Source
AI summary
A bonding structure includes a first member and a second member. The first member includes a first layer mainly composed of a first metal. The second member includes a second layer mainly composed of a second metal different from the first metal. In the bonding structure, the first layer of the first member and the second layer of the second member are solid-phase bonded. As an example, the first metal is Cu, and the second metal is Ag. As another example, the first metal is Cu, and the second metal is Au. As a still another example, the first metal is Au, and the second metal is Ag.