Cu Nanowire Interconnect Diffusion Barrier for Signal Isolation
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Solution Overview
Problem
Existing semiconductor interconnect structures, particularly dual damascene wiring structures, face challenges in achieving high reliability and dependability due to the need for improved isolation from dielectric substrates to enhance signal transmission efficiency.
Innovation Solution
The semiconductor structure comprises a first dielectric layer with a diffusion barrier layer to isolate the first interconnect structure, an insulator layer, and a second dielectric layer with a via and second interconnect structure, where the via's bottom surface is partially on the insulator layer and the second interconnect structure is isolated from the first dielectric layer, using a method involving recess formation, capping, and nitridization to ensure reliable electrical connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If dual damascene wiring structures are used for interconnects, then signal transmission speed is improved, but reliability and dependability deteriorate due to insufficient isolation from dielectric substrate
Solution Approach 1:
A diffusion barrier layer is introduced as an intermediary between the copper interconnect structure and the dielectric substrate. This barrier layer prevents direct interaction between copper and dielectric materials, eliminating reliability issues while preserving the high-speed signal transmission properties of copper interconnects.
Solution Approach 2:
The interconnect structure is segmented into distinct functional layers: the copper interconnect, the diffusion barrier layer, and the dielectric substrate. This segmentation allows each layer to perform its specific function independently, with the barrier layer specifically addressing reliability concerns without affecting signal transmission performance.
2Reliability
If diffusion barrier layer is added to isolate interconnect from dielectric, then reliability is improved, but device complexity increases
Solution Approach 1:
The diffusion barrier layer formation is merged with the existing dual damascene fabrication process. The barrier layer is deposited as part of the interconnect formation sequence, combining multiple functions (isolation, structural support, process integration) into a single integrated step rather than adding separate complex processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the reliability and dependability of interconnect structures by isolating the interconnects from the dielectric substrate, improving signal transmission efficiency and reducing defects through the use of a diffusion barrier and nitridized layers.
Implementation Method 1
a diffusion barrier layer configured to isolate the first interconnect structure from the first dielectric layer and the insulator layer
Implementation Method 2
applying a nitridized layer to surfaces in the via
Data Source
AI summary
A structure comprising a first dielectric layer embedded with a first interconnect structure; an insulator layer disposed on the first dielectric layer; a second dielectric layer disposed on the insulator layer; a via residing within the second dielectric layer; and a second interconnect structure isolated from the first dielectric layer. Further, a diffusion barrier layer is configured to isolate the first interconnect structure from the first dielectric layer and the insulator layer. Further, a first portion of a bottom surface of the via resides on a top surface of the insulator layer, a second portion of the bottom surface of the via resides on a first portion of a top surface of the first interconnect structure. Moreover, a capping layer residing on a second portion of the top surface of the first interconnect structure and a first portion of a bottom surface of the second dielectric layer.