Semiconductor/Solid-State Device Details TRIZ Cases

Sintered nano particle metallic paste joins the lid ridge to the carrier, reducing thermal mismatch stress on the integrated circuit.

A brown-oxide layer on circuit carrier bonding pads enables direct bump placement without solder mask.

Spacers isolate the printed circuit board from the case bottom, reducing heat conduction to control ICs and raising operating temperature limits.

A protruding frame portion defines a precise space for thermal grease, resolving inconsistent conduction caused by variable grease thickness.

A conductive through via structure penetrates a semiconductor base to electrically connect front and back electrodes.

Selective metal coating on an insulating housing reduces EMI while minimizing space occupation and manufacturing complexity.

An electrolytic copper plating layer with passivation film lowers in-plane resistance, eliminating uneven current distribution and multiple wire requirements.

A metal layer frame with a filled trench prevents insulating compound flow-off during rotation, maintaining insulation integrity.

Conductive spacers with vias shorten electrical paths between stacked dies, reducing resistance and power consumption.

A system-in-package uses vertically oriented dielets and thermal spreaders to conduct heat from host dies.

Indentations in an integrated heat spreader thermally isolate secondary dies, reducing junction temperatures without adding liquid cooling complexity.

Protruding portions of supporting pads secure electronic components between positioning pillars, eliminating peelable adhesive layers and residual glue issues.

Leaded packaged ICs contact flex circuit lower surfaces to enable stacked memory modules, resolving reliability limits in existing stacking methods.

A through-silicon via structure contacts conductive pad layers at different levels to increase bonding areas and reduce resistance.

Coreless substrates and vertical connectors shorten signal paths, reducing IR drops and enabling sub-millimeter thickness.

A semiconductor structure integrates power devices on a common substrate using buried wells and trench structures to clamp breakdown voltages.

A high-voltage semiconductor structure uses segmented doped regions to enhance breakdown voltage and trigger insulated gate bipolar transistors.

Plasma trimming with zero bias power simultaneously etches alternating polysilicon and oxide layers to achieve smooth sidewalls.

Brazing two aluminum blocks creates an integrated structure that eliminates separate assembly steps while improving thermal dissipation and weight.

A light emitting device package uses a bonding ball on the wire stitch to secure electrical connections.

Extended electrodes overlap inner-layer ground planes to distribute conductor density uniformly across the multilayer board structure.

Dielectric molds pattern indium bumps to planarize wafers, accommodating thermal expansion mismatches between dissimilar materials.

A semiconductor package dam features a recessed top structure to retain bonding adhesive within the attachment zone.

Modified alkoxides enable rapid UV curing of hybrid resins, eliminating crack formation and high organic residue content.

Vertical inter-tier vias bypass long lateral routes to minimize voltage drops and signal degradation in three-dimensional integrated circuits.

Segmented metal layers fill through holes while controlling wiring thickness.

A diffusion barrier layer isolates copper interconnects from dielectric substrates to prevent material degradation.

Trench filling with protective material covers semiconductor dice side surfaces during wafer thinning.

A die-stacked device uses a partitioned multi-hop communication network to interconnect horizontally and vertically stacked dies via an interposer.

Segmented laser grooves divide ceramic boards with precise depth control, reducing micro-cracks and heat-affected zones.

Backside die pads enable debugging without increasing pin count, resolving space constraints in low-pin-count packages.

A press fitting head integrates an elastic contact member with a transparent alignment mark recognition area for optical detection.

Segmented copper plating deposits low-impurity conductive plugs to prevent void formation and enhance electromigration resistance.

A wiring board via conductor features a bent portion with changing side surface inclination to disperse thermal stress across insulation layers.

An oblique pyramid insulating layer guides paste flow and prevents conductive particle gathering between adjacent bumps, raising package yield.

An expanding element converts parallel force into perpendicular pressure, enabling easy assembly while protecting soldering joints from excessive load.

Vertical gate stacking with segmented channels and local pad thickness reduction improves data processing while managing structural complexity.

Selective epitaxial growth forms a doped polysilicon contact plug covered by a metal silicide layer, preventing etching solution damage during wet processing.

Differentiated electrode filling in semiconductor contact holes mitigates stress-induced cracks and current concentration in terminal regions.

Stacking semiconductor chips on an insulating layer enables signal transmission through uniform via holes without deep chip penetration.

Coordinating dummy fill placement across successive layers eliminates large overlap areas that cause unwanted bulk capacitance and signal delays.

A visible light communication system-on-a-chip integrates an encoder and driver with a compound semiconductor LED on silicon.

Integrates alignment patterns into peripheral metal routes to verify substrate shifts without occupying additional non-display area space.

Bus bars bond directly to semiconductor terminals, creating high-conductivity thermal paths for heat dissipation.

Coil springs in a floating bracket adjust contact force on integrated circuits, preventing solder joint damage during toolless installation.

A vapor chamber contacts an electronic element to transfer heat rapidly to a cooling body with fins.

A heat spreader with a non-tapered opening enables top mold gate injection for semiconductor packages.

Replacing electrical bonding wires with optical fibers eliminates inductance and parasitic capacitances, boosting signaling speed in stacked die architectures.

Fan-out package structure positions bumps directly below the controller to minimize parasitic capacitance.

An atomic layer deposition TaN barrier on a copper plug fills high aspect ratio openings, reducing contact resistivity and improving device reliability.

An SOI die integrates capacitors and switches with substrate inductors to form a compact RF filter structure.

Multi-plane interconnection structures reduce current loop inductance below 10 nH, enabling faster switching speeds and minimizing overvoltages.

A dual anti-fuse structure in a common semiconductor fin uses high-k dielectrics for independent programming.

A graphitic via uses a cohered nanoparticle film to bridge interconnect levels in integrated circuits.

Segmented fluid-filled microchannels extract localized heat from chip hot spots to reduce cooling system complexity.

Quasi-random conductive particles in the glue layer form a unique electrical signature to verify integrated circuit authenticity.

Self-aligned monolayer sealing layers prevent material diffusion and lower contact resistance, resolving power dissipation issues in scaled CMOS structures.

Varying insulating and via layer thicknesses in a fan-out package disperse stress, preventing cracks while enabling direct board mounting.

Front and backside seal rings segment stress protection to prevent dicing damage while maintaining manufacturing simplicity.

Pre-formed copper contact blocks bypass complex laser drilling to enhance power transmission and heat dissipation while reducing fabrication complexity.

A package carrier uses a glass substrate interposer with conductive vias and surface pads to establish direct electrical connections.

Combining straight-chain and branched-chain organopolysiloxanes resolves insufficient adhesion to adherends while maintaining peeling resistance.

A stress compensating polymer layer bonds heterogeneous wafers at low temperature to form a multi-layer structure.

A shaped wavelength conversion element uses non-orthogonal surfaces to redirect trapped light toward the extraction surface.

Signature patterns isolate focus and exposure variations to correct process drift without increasing system complexity.

A reinforcing section at the connection area between conductive layers mitigates stress-induced cracks in semiconductor devices.

Alternating perpendicular trench arrays balance wafer stress, reducing warpage and improving product yield for high-density devices.

Heat slug pillars conduct heat from the die to the substrate while absorbing mechanical stress during encapsulation.

A hybrid interconnect structure uses a dense dielectric spacer on sidewalls to enhance conductor adhesion and barrier coverage.

Anneal and reflow process creates metal alloy liner simultaneously with metal fill, reducing liner cross-sectional area to enhance conductivity.

Low-grade silicon slabs integrate passive components and semiconductor chips to eliminate parasitic resistances and inductances.

A copper silicide interconnect layer forms via heat treatment to enhance electrical coupling.

A recessed case electrode design with nested holding portions secures wire bonds while minimizing device height.

Segmenting power rails into base and insert mask patterns reduces stitch length overlap and variability in semiconductor manufacturing.

Exposed conductive members shift cavity resonance frequencies away from operating bands while radiating heat through upper and bottom surfaces.

Excavated substrate regions and support grids stabilize silicon-on-insulator dies during singulation, preventing warpage while enhancing thermal dissipation.

Evaluates voltage drop against load current to estimate chip temperature, replacing inaccurate current-based methods that ignore wear and thermal stress.

A package on package configuration uses copper pillars to electrically couple stacked integrated circuit packages.

A tin and nickel-containing copper alloy forms a stable capping layer on oxidized copper surfaces using gaseous ambient reactions.

Metal-assisted chemical etching forms nanoscale patterns in porous silicon, resolving mechanical stability issues during fabrication.

A stud bump through electrode reduces semiconductor device size by allowing narrower electrode pitch while maintaining electrical coupling stability.

Selective etching and oxidation create self-aligned spacers on molybdenum word lines, reducing RC delay while simplifying manufacturing complexity.

Stacking memory on processors using hybrid bonding resolves high I/O pad density constraints while reducing latency and power consumption.

A backlight unit replaces the printed circuit board with a reflecting plate featuring metal patterns on both surfaces to mount light sources directly.

Stacked half-etched leadframes link signal routing and power distribution layers to shrink board outlines without sacrificing thermal dissipation.

Patsnap Eureka analyzes how reflective metal patterns and etch stop layers simplify etching through stacked memory cells to reduce defect rates.

Molded plastic encases heat pipes in a base trough, replacing welding to cut production costs and assembly time.

Series-connected on-die capacitors distribute voltage across distinct power supply rails to reduce stress on individual components.

A slat fastening assembly uses detachable magnetic components to secure a slat onto a circuit board base without tools.

Segmented adhesive and base layers enhance low-frequency electromagnetic interference shielding while resolving adhesion failures in semiconductor packaging.

Raised mounting pads with dielectric caps confine solder bumps to prevent wicking along electrical traces, ensuring uniform underfill distribution.

Angled word line contact structures form directly on non-horizontal conductive layer surfaces within alternating dielectric stacks.

Three-dimensional vertically oriented capacitor structures increase capacitance density without expanding silicon area or integration costs.

Hot-melt silicone particles and treated silica fillers achieve a linear expansion coefficient under 15 ppm/°C, solving high-temperature hardness issues.

Continuous titanium or platinum layers bridge silicon nitride and polyimide films, suppressing moisture penetration that corrodes ohmic electrodes.

Single insulated substrate connects two semiconductor chips in series to simplify circuit structure and reduce power loss.

High-temperature dielectric redistribution layers on cured component carrier stacks reduce warpage and delamination during thermal processing.

Integrating passive windings into redistribution layer metallization planes.