Low-Grade Silicon Package for Embedded Passives

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Conventional semiconductor devices face challenges with parasitic resistances and inductances, thermal performance, and reliability due to mismatched coefficients of thermal expansion and material compatibility issues, particularly in power switching devices like synchronous Buck converters.

Innovation Solution

A semiconductor package structure and fabrication method using low-grade silicon slabs as both carriers and packages, eliminating leadframes, bonding wires, and plastic encapsulations, and integrating passive components, which reduces thermal stresses and parasitic resistances while enhancing thermal conductivity and manufacturing efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If conventional composite packages with leadframes and bonding wires are used, then device assembly is straightforward, but parasitic resistances and inductances increase significantly

Engineering Contradiction:
Improvedevice assemblyVSAvoidparasitic resistances and inductances
Core Design Contradiction:
Ease of manufactureVSObject-generated harmful factors

Solution Approach 1:

The patent merges the package substrate and interconnection structure into a single integrated low-grade silicon slab. The substrate directly provides both mechanical support and electrical interconnections, eliminating the need for separate leadframes and bonding wires. This integration reduces the number of components and interfaces, thereby reducing parasitic resistances and inductances while maintaining ease of manufacture through standardized wafer fabrication processes.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent extracts and removes the leadframe and bonding wire interconnection structures from the conventional package design. By eliminating these separate components and replacing them with direct substrate-based interconnections, the design reduces parasitic elements while simplifying the overall device architecture.

Inventive Principle:
Principle #2Taking out (Extraction)

2Adaptability or versatility

If widely different materials (metals, ceramics, plastics) are used in composite packages, then device functionality is achieved, but thermo-mechanical stress and delamination risk increase

Engineering Contradiction:
Improvedevice functionalityVSAvoidthermo-mechanical stress and delamination risk
Core Design Contradiction:
Adaptability or versatilityVSStability of the object's composition

Solution Approach 1:

The patent employs homogeneity by using a single material system (low-grade silicon) for the package substrate and interconnections, rather than combining widely different materials like metals, ceramics, and plastics. This uniform material composition ensures matched coefficients of thermal expansion, eliminating thermo-mechanical stress and delamination risks while maintaining full device functionality through the silicon-based platform.

Inventive Principle:
Principle #33Homogeneity

Solution Approach 2:

The patent uses low-grade silicon as a composite material platform that integrates both structural and electrical functions. This single composite material replaces multiple disparate materials, providing both mechanical support and electrical interconnection while ensuring thermal compatibility across all device components.

Inventive Principle:
Principle #40Composite materials

3Reliability

If plastic encapsulation is used for device packaging, then device protection is provided, but moisture-related degradation and CTE mismatch issues occur

Engineering Contradiction:
Improvedevice protectionVSAvoidmoisture-related degradation and CTE mismatch
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent replaces plastic encapsulation with a low-grade silicon substrate that provides both mechanical protection and electrical functionality. This homogeneous silicon-based approach eliminates the CTE mismatch between plastic and semiconductor components, while the silicon material's inherent properties provide protection against moisture-related degradation.

Inventive Principle:
Principle #33Homogeneity

4Reliability

If low-grade silicon slabs are used for both chip assembly and packaging, then thermal stresses and parasitic resistances are reduced, but manufacturing precision requirements increase

Engineering Contradiction:
Improvethermal stress reductionVSAvoidwafer fabrication precision
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent utilizes parameter changes by leveraging the inherent properties of low-grade silicon, which has relaxed purity requirements compared to semiconductor-grade silicon. This allows the use of standard wafer fabrication processes with typical precision levels to achieve the required manufacturing quality, while the low-grade silicon's thermal properties provide stress reduction benefits.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution minimizes thermo-mechanical stresses, reduces parasitic resistances and inductances, improves thermal and electrical performance, and enhances reliability by using low-grade silicon slabs for both chip assembly and packaging, thereby addressing the limitations of conventional composite packages.

Implementation Method 1

improves thermal and electrical performance

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

minimizes thermo-mechanical stresses

Methodology Applied
Scientific EffectThermal expansion: Thermal Expansion

Data Source

PatentUS10153220B2Silicon package having electrical functionality by embedded passive components
Publication Date: 2018.12.11 TEXAS INSTRUMENTS INC
  • US10153220B2 patent drawing
  • US10153220B2 patent drawing

AI summary

A packaged electronic system comprises a slab (210) of low-grade silicon (l-g-Si) configured as ridges (114) framing a depression of depth (112) including a recessed central area suitable to accommodate semiconductor chips and embedded electrical components, the depth at least equal to the thickness of the chips and the components, the ridge covered by system terminals (209b) connected to attachment pads in the central area; and semiconductor chips (120, 130) having a thickness and terminals on at least one of opposing chip sides, the chips terminals attached to the central area terminals so that the opposite chip side is coplanar with the system terminals on the slab ridge.