Dual Seal Ring Structure for Semiconductor Dicing Stress Protection
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in protecting integrated circuits from damage during the dicing of semiconductor wafers, as existing seal ring structures are inadequate in preventing mechanical stress and ensuring operational reliability.
Innovation Solution
The implementation of a dual seal ring structure, comprising a first seal ring on the front surface and a second seal ring on the backside surface of the semiconductor device, which are formed using dielectric and metallization layers, and patterned conductive layers to provide structural reinforcement and prevent damage during wafer singulation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single seal ring structure is used, then the manufacturing process is simple, but the protection against mechanical stress during dicing is insufficient
Solution Approach 1:
The seal ring is divided into two separate structures: a first seal ring formed on the front surface of the semiconductor device and a second seal ring formed on the backside surface. This segmentation allows each seal ring to independently provide stress protection during dicing, resolving the contradiction by enhancing reliability through structural division while maintaining manageable complexity through standardized formation processes for each segment.
Solution Approach 2:
The invention transitions from a single-plane seal ring to a dual-plane configuration by forming seal rings on both the front surface and backside surface of the semiconductor device. This dimensional expansion provides stress protection from both surfaces simultaneously, effectively preventing damage during dicing while distributing the protective function across multiple spatial dimensions.
2Reliability
If existing seal ring structures are used, then the manufacturing process is straightforward, but damage prevention during dicing is inadequate
Solution Approach 1:
The seal ring formation process is segmented into two distinct manufacturing stages: forming the first seal ring on the front surface using standard lithography and deposition, and forming the second seal ring on the backside surface after wafer thinning. This segmentation enables damage prevention through dual-plane protection while maintaining ease of manufacture by utilizing existing fabrication processes for each stage.
Solution Approach 2:
The first seal ring is formed on the front surface before wafer thinning, and the second seal ring is formed on the backside surface after thinning but before dicing. This preliminary action sequence ensures both seal rings are in place to provide comprehensive stress protection during the dicing process, resolving the contradiction between enhanced damage prevention and manufacturing complexity.
3Reliability
If dual seal ring structure is implemented, then stress protection is enhanced, but the manufacturing process complexity increases
Solution Approach 1:
The dual seal ring structure is segmented into a first seal ring on the front surface and a second seal ring on the backside surface, each formed through standardized processes. This segmentation enhances stress protection by providing dual-plane reinforcement while managing device complexity through modular formation steps that can be integrated into existing manufacturing workflows.
Solution Approach 2:
Both the first and second seal rings serve the universal function of stress protection during dicing, while also providing structural reinforcement for the respective surfaces. This multi-functionality enhances stress protection capabilities without proportionally increasing device complexity, as both structures perform similar protective roles in different spatial planes.
Data Source
AI summary
A semiconductor structure has a semiconductor device, a first seal ring, and a second seal ring. The semiconductor device has a first surface and a second surface opposite to the first surface. The first seal ring is disposed on the first surface of the semiconductor device and adjacent to edges of the first surface. The second seal ring is disposed on the second surface of the semiconductor device and adjacent to edges of the second surface. A semiconductor manufacturing process is also provided.