High-Voltage Semiconductor Structure With Segmented Doped Regions

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Solution Overview

Problem

Traditional high-voltage semiconductor devices face limitations in achieving optimal performance and efficiency, particularly in managing voltage differences and triggering insulated gate bipolar transistors (IGBTs) in high-voltage applications.

Innovation Solution

A high-voltage semiconductor structure comprising a substrate with multiple doped regions and a gate structure, where the dopant concentrations and types are strategically arranged to enhance voltage differences and trigger IGBTs, including the use of insulating layers and specific dopant materials like boron, phosphorus, and arsenic, to improve breakdown voltage and trigger voltage characteristics.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If traditional high-voltage semiconductor devices (VDMOS or LDMOS) are used, then cost effectiveness and process compatibility are improved, but performance and efficiency in managing voltage differences and triggering IGBTs are insufficient

Engineering Contradiction:

Improveperformance and efficiency in managing voltage differences and triggering IGBTsVSAvoiddevice structure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The device is segmented into multiple doped regions (first doped region in substrate, second doped region in first doped region, third doped region in well, fourth doped region in well) with different conductive types and doping concentrations. This segmentation allows independent optimization of voltage blocking and triggering functions, resolving the contradiction between reliability and complexity by distributing functionality across specialized regions.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different regions are assigned specific local qualities: the first doped region provides voltage blocking, the second doped region enhances electric field concentration for triggering, the third and fourth doped regions in the well provide additional voltage blocking and carrier generation. This local quality assignment optimizes each region's contribution to overall device performance.

Inventive Principle:

Principle #3Local quality

2Strength

If dopant concentrations are increased to enhance breakdown voltage, then voltage blocking capability is improved, but device complexity and manufacturing difficulty increase

Engineering Contradiction:

Improvebreakdown voltageVSAvoiddoping structure complexity

Core Design Contradiction:

StrengthVSDevice complexity

Solution Approach 1:

The patent employs systematic parameter changes by varying dopant concentrations across different regions: the first doped region has a first doping concentration, the second doped region has a second doping concentration, the third doped region has a third doping concentration, and the fourth doped region has a fourth doping concentration. These parameter variations are optimized to achieve high breakdown voltage while maintaining manufacturability through standard doping processes.

Inventive Principle:

Principle #35Parameter changes

3Reliability

If multiple doped regions with different conductive types are introduced to trigger IGBTs, then voltage difference management is improved, but manufacturing process complexity increases

Engineering Contradiction:

Improvevoltage difference management and IGBT triggeringVSAvoidmanufacturing process simplicity

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The well structure with third and fourth doped regions is formed in advance during the manufacturing process, creating a pre-configured carrier generation region. This preliminary action ensures that when the device operates, the IGBT triggering function is already optimized, reducing the need for additional manufacturing steps while maintaining high reliability in voltage difference management.

Inventive Principle:

Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The structure effectively increases voltage differences and enhances the breakdown voltage of IGBTs, leading to improved performance and efficiency in high-voltage semiconductor devices by ensuring quick and reliable triggering of the IGBTs.

Implementation Method 1

The first doped region has the first conductive type and is formed in the substrate. The well has a second conductive type and is formed in the substrate. The second doped region has the second conductive type and is formed in the first doped region. The third doped region has the first conductive type and is formed in the well. The fourth doped region has the second conductive type and is formed in the well.

Methodology Applied

Scientific EffectDoping: Dopants

Data Source

PatentUS20170271485A1High-voltage semiconductor structure

Publication Date: 2017.09.21 VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION

AI summary

A high-voltage semiconductor structure including a substrate, a first doped region, a well, a second doped region, a third doped region, a fourth doped region, and a gate structure is provided. The substrate has a first conductive type. The first doped region has the first conductive type and is formed in the substrate. The well has a second conductive type and is formed in the substrate. The second doped region has the second conductive type and is formed in the first doped region. The third doped region has the first conductive type and is formed in the well. The fourth doped region has the second conductive type and is formed in the well. The gate structure is disposed over the substrate and partially covers the first doped region and the well.