Semiconductor Device Bus Bar Thermal Conduction
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Solution Overview
Problem
Conventional semiconductor devices face inefficiencies in heat dissipation due to the presence of insulators, which deteriorate heat conductivity from the semiconductor element to the base plate, leading to potential insufficient heat dissipation.
Innovation Solution
The semiconductor device configuration includes a metal layer with semiconductor elements and bus bars, where the semiconductor element and bus bars are at the same potential, eliminating the need for electrical insulation, allowing for direct thermal connection through high-conductivity paths, thereby reducing thermal resistance and enhancing heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If insulators are provided between the semiconductor element and base plate for electrical insulation, then electrical insulation is achieved, but heat dissipation efficiency deteriorates due to increased thermal resistance
Solution Approach 1:
The semiconductor element is divided into multiple regions with different potential levels (first potential region and second potential region). By segmenting the element, different portions can be connected to different potential buses, allowing thermal conduction paths to be established without requiring complete electrical insulation between all components.
Solution Approach 2:
A potential bus is introduced as an intermediary component to establish thermal conduction between the semiconductor element and heat dissipation structure. The potential bus serves as a thermal conductor that allows heat to flow from the semiconductor element to the heat dissipation structure while maintaining electrical potential differences through separate connection paths.
2Adaptability or versatility
If multiple connection terminals are provided on the semiconductor element for electrical connections, then electrical connectivity is improved, but device complexity increases
Solution Approach 1:
The potential bus serves multiple functions simultaneously: it acts as an electrical connection element, a thermal conduction path, and a structural support component. By making the potential bus multi-functional, the patent reduces the total number of separate components needed, thereby simplifying device complexity while maintaining electrical connectivity.
Solution Approach 2:
The patent merges the functions of electrical connection and thermal conduction into a single component (the potential bus). Instead of having separate electrical connectors and thermal pathways, the potential bus combines both functions, reducing the number of parts and simplifying the overall device structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves heat dissipation efficiency by eliminating insulating materials in the heat conduction path, reducing thermal resistance, and preventing stress concentration, leading to enhanced reliability and reduced size of the semiconductor device.
Implementation Method 1
one end of the first bus bar is bonded to the first connection terminal; another end of the first bus bar is an output unit
Implementation Method 2
one end of the second bus bar is bonded to the second connection terminal; another end of the second bus bar is bonded to the metal layer
Data Source
AI summary
This semiconductor device includes a semiconductor element mounted on a metal layer, first to third connection terminals that are provided on the semiconductor element, a first bus bar bonded to the first connection terminal, and a second bus bar bonded to the second connection terminal. The semiconductor element is bonded to the metal layer, and the first to third connection terminals are disposed on a top surface of the semiconductor element. One end of the first bus bar is bonded to the first connection terminal, another end of the first bus bar is an output unit, one end of the second bus bar is bonded to the second connection terminal, and another end of the second bus bar is bonded to the metal layer. A first surface of the semiconductor element and the second bus bar are at an identical potential.