Cu Wiring Adhesion in Wide Bandgap Semiconductor Devices
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Solution Overview
Problem
The adhesive force between the Cu wiring electrode and the diffusion prevention film in semiconductor devices is weakened due to the formation of an oxide film, leading to peeling issues when operated at temperatures exceeding 200°C, as the Cu wiring electrode contains gases that react with the film.
Innovation Solution
A method involving a reducing process under an NH3 atmosphere and a heating process is used to reduce the oxide film on the Cu wiring electrode, followed by forming a diffusion prevention film and sealing it with an organic resin film, which reduces the gases and strengthens the adhesive force.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a Cu wiring electrode is formed thick by using a plating method to increase current capacity, then the current carrying capability is improved, but the adhesive force between the Cu wiring electrode and the diffusion prevention film is weakened due to oxide film formation and gas emission at high temperatures
Solution Approach 1:
The patent applies preliminary action by performing a reducing treatment on the Cu wiring electrode before forming the diffusion prevention film. This reducing treatment removes oxide films and reduces gas content in advance, preventing adhesive force degradation that would occur during subsequent high-temperature operation. The diffusion prevention film is then formed on the pre-treated Cu surface, ensuring strong adhesion from the outset.
Solution Approach 2:
The patent converts the harmful effect of oxide films and gases into a benefit by using a reducing treatment that specifically targets and removes these problematic substances. The reducing treatment transforms the Cu wiring electrode from a state with high oxide and gas content (which would cause poor adhesion) to a state with low oxide and gas content (which ensures good adhesion), while maintaining the thick Cu structure needed for high current capacity.
2Power
If the semiconductor device is operated at temperatures exceeding 200°C to meet high power requirements, then the power handling capability is improved, but the adhesive force between the diffusion prevention film and Cu wiring electrode deteriorates due to oxide film formation and gas emission
Solution Approach 1:
The patent performs the reducing treatment before the diffusion prevention film is formed, preparing the Cu wiring electrode surface in advance to resist high-temperature degradation. By removing oxides and reducing gas content before the device enters high-temperature operation, the adhesive force is preserved even when the device operates at temperatures exceeding 200°C for high power handling.
Solution Approach 2:
The reducing treatment serves as a preliminary anti-action against the harmful effects that would occur during high-temperature operation. By preemptively removing oxide films and reducing gas content, the treatment counteracts the tendencies that would otherwise lead to adhesive force degradation and peeling during high-power, high-temperature operation.
3Stability of the object's composition
If a diffusion prevention film is formed on the Cu wiring electrode to prevent reaction with organic resin, then chemical stability is improved, but the adhesive force is reduced due to the presence of oxide films and gases on the Cu surface
Solution Approach 1:
The patent applies preliminary action by performing the reducing treatment on the Cu wiring electrode before forming the diffusion prevention film. This pre-treatment removes oxide films and reduces gas content on the Cu surface, creating an optimal substrate for subsequent film formation. The diffusion prevention film is then deposited on this pre-conditioned surface, ensuring both chemical stability and strong adhesive force.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively suppresses the peeling of the diffusion prevention film from the Cu wiring electrode, ensuring the semiconductor device's reliability at high temperatures by minimizing the formation of oxide films and maintaining the adhesive force.
Implementation Method 1
a reducing process of reducing the Cu wiring electrode under a NH3 atmosphere
Implementation Method 2
heating the Cu wiring electrode at the same time as the reducing process... these gases are emitted from the inside of the Cu wiring electrode
Data Source
AI summary
A method for manufacturing a semiconductor device includes: a process of forming a Cu wiring electrode by a plating method above a semiconductor element using a wide bandgap semiconductor as a base material; a reducing process of reducing the Cu wiring electrode under a NH.sub.3 atmosphere; a heating process of heating the Cu wiring electrode at the same time as the reducing process; a process of forming a diffusion prevention film covering the Cu wiring electrode after the heating process; and a sealing process of covering the diffusion prevention film with an organic resin film.