Current-Mirror Temperature Detection Circuit for Stable Threshold Sensing
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Solution Overview
Problem
Existing semiconductor devices face challenges in accurately detecting temperature due to characteristic shifts in circuit elements, which affect the reliability of overheating detection and current flow, leading to inaccuracies in temperature monitoring.
Innovation Solution
A semiconductor device configuration that includes a constant current source, a current mirror circuit, a temperature detection circuit with a temperature detection diode and a temperature detection voltage generation circuit, a reference voltage generation circuit with identical characteristics, and a comparison circuit to output a temperature detection signal, ensuring stable detection at a predetermined threshold temperature by reducing characteristic shifts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a temperature detection circuit is implemented using conventional circuits, then temperature detection function is achieved, but characteristic shifts in circuit elements cause detection inaccuracy
Solution Approach 1:
The patent changes the parameter of current uniformity by introducing a current mirror circuit that copies the constant current to multiple paths, ensuring that the temperature detection diode and reference voltage generation circuit receive identical currents. This parameter change eliminates detection inaccuracies caused by characteristic shifts in circuit elements.
Solution Approach 2:
The patent uses a current mirror circuit to create a copy of the constant current from the constant current source. This copied current is supplied to both the temperature detection diode and the reference voltage generation circuit, ensuring identical operating conditions and eliminating detection errors due to circuit element variations.
2Measurement precision
If additional correction circuits are added to compensate for characteristic shifts, then detection accuracy is improved, but device complexity increases
Solution Approach 1:
The patent implements self-service by using the same constant current (copied via current mirror) for both temperature detection and reference voltage generation. The circuit automatically compensates for characteristic shifts without requiring external correction circuits, as the identical current ensures that any circuit element variations affect both paths equally and are naturally canceled out in the comparison.
3Adaptability or versatility
If different currents are supplied to temperature detection circuit and reference voltage generation circuit, then circuit design flexibility is improved, but detection accuracy deteriorates due to characteristic shifts
Solution Approach 1:
The patent changes the parameter of current uniformity by introducing a current mirror circuit that copies the constant current to multiple paths, ensuring that the temperature detection diode and reference voltage generation circuit receive identical currents. This parameter change eliminates detection inaccuracies caused by characteristic shifts in circuit elements.
Solution Approach 2:
The patent uses a current mirror circuit to create a copy of the constant current from the constant current source. This copied current is supplied to both the temperature detection diode and the reference voltage generation circuit, ensuring identical operating conditions and eliminating detection errors due to circuit element variations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the accuracy of temperature detection by maintaining consistent characteristic shifts across the device, eliminating the need for additional correction circuits and reducing the impact of deviations in current and threshold voltages, thus enhancing the reliability of overheating detection.
Implementation Method 1
a temperature detection diode, and a temperature detection voltage generation circuit connected in series with the temperature detection diode, the temperature detection circuit being configured to output a temperature detection voltage based on the copied current
Implementation Method 2
a current mirror circuit that copies a current from the constant current source to thereby generate a copied current
Implementation Method 3
a comparison circuit that compares the temperature detection voltage with the reference voltage, to thereby output a temperature detection signal
Data Source
AI summary
A semiconductor device includes a constant current source, a current mirror circuit, a temperature detection circuit, a reference voltage generation circuit, and a comparison circuit. The current mirror circuit copies a current from the constant current source to thereby generate a copied current. The temperature detection circuit includes a temperature detection diode and a temperature detection voltage generation circuit connected in series with the temperature detection diode, and outputs a temperature detection voltage based on the copied current. The reference voltage generation circuit generates a reference voltage based on the copied current. The comparison circuit outputs a temperature detection signal on the basis of a result of comparing the temperature detection voltage with the reference voltage. The temperature detection voltage generation circuit and the reference voltage generation circuit have the same characteristics.