Curved Conducting Elements for Microelectronic Interconnections
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Solution Overview
Problem
Existing methods for connecting microelectronic devices, such as TSV interconnection elements, require additional conducting pads on the back of the chip, increasing fabrication complexity and area usage.
Innovation Solution
A method involving forming conducting elements on the front face of a support with portions extending at an angle, allowing for connection elements to project from the back face without additional pads on the chip back, using trenches and a conducting layer to create free ends that can be bent and assembled with other devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If TSV interconnection elements are used to connect pads on the front face of a chip to pads on another support, then interconnection is achieved, but additional conducting pads must be made on the back of the chip, increasing fabrication complexity and area usage
Solution Approach 1:
The invention extracts the conducting pad formation step from the back face of the chip by making the connection elements pass through the entire thickness of the chip, bringing both connection points to the front face. This eliminates the need for additional back-face pad fabrication steps while maintaining reliable interconnection.
Solution Approach 2:
The invention changes the spatial arrangement by transitioning from a method requiring back-face access to one where all connection elements are accessible from the front face only, effectively using the chip thickness dimension to route connections through to the opposite face.
2Reliability
If TSV interconnection elements are used to connect pads on the front face of a chip to pads on another support, then interconnection is achieved, but additional conducting pads on the back of the chip increase area usage
Solution Approach 1:
The invention removes the requirement for back-face conducting pads by routing all connection elements through the chip thickness to emerge on the front face, thereby eliminating the area consumption associated with back-face pad structures.
3Reliability
If wire bonding techniques are used to connect a chip to a support, then interconnection is achieved, but the chip and support must be bonded together first, limiting assembly flexibility
Solution Approach 1:
The invention enables assembly flexibility by making all connection elements accessible from the front face only, allowing the chip to be connected to supports in various configurations without requiring the chip to be bonded face-down or accessed from the back face.
4Reliability
If conducting pads are made on the back of the chip for TSV interconnections, then interconnection functionality is achieved, but extra fabrication steps are required to deposit conducting layers and form patterns
Solution Approach 1:
The invention eliminates the need for separate back-face conducting layer deposition and pattern formation steps by designing connection elements that pass through the chip and are accessible from the front face only, thereby simplifying the fabrication process.
Data Source
AI summary
A method of making connection elements for a microelectronic device is provided, including foil ling a conducting layer on a support on which there is at least one conducting pad located on a front face of the support opposite a back face thereof, the conducting layer including a first conducting portion in contact with at least one conducting pad, the first conducting portion extending on the front face and being connected to at least one second conducting portion extending in contact with at least one given wall of the support being located between the front and back faces and forming a non-zero angle with the front face; thinning the support at the back face to release one conducting end of the second conducting portion as a free conducting end projecting from the back face; and after the thinning, bending the free conducting end projecting from the back face.