Curved Nanowire Semiconductor Device with Suspended Epitaxial Layers
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Solution Overview
Problem
Current semiconductor technologies face challenges in forming high-quality semiconductor materials with high mobility, such as those needed for advanced MOSFETs, due to difficulties in stress relaxation and defect suppression in nanowire structures.
Innovation Solution
A semiconductor device and manufacturing method involving curved nanowires with suspended semiconductor layers, where the nanowires act as seed layers, allowing for stress relaxation and defect suppression by forming semiconductor layers around the nanowires, which are supported by a substrate via a supporting portion, enabling high mobility and improved device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If nanowires are formed as seed layers for growing semiconductor layers, then high mobility semiconductor material can be achieved, but stress accumulation and defects occur in the nanowire structure
Solution Approach 1:
The patent extracts the nanowire from direct contact with the substrate by removing the substrate material underneath the nanowire, creating a suspended structure. This separation allows stress relaxation in the nanowire while maintaining its function as a seed layer for growing high-quality semiconductor layers.
Solution Approach 2:
The patent segments the nanowire structure into distinct functional portions: a seed layer portion that remains for growing semiconductor layers, and a sacrificial portion that is removed to create suspension. This segmentation enables the nanowire to serve multiple functions while reducing stress accumulation.
2Object-generated harmful factors
If curved nanowires are used instead of straight nanowires, then stress relaxation is improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies curvature to the nanowire structure, forming it in an arc shape rather than a straight line. This curvature allows the nanowire to better accommodate lattice mismatches and thermal expansion differences, thereby reducing stress accumulation while maintaining structural integrity.
3Reliability
If semiconductor layers are grown around suspended nanowires, then high mobility is achieved, but precise control of layer formation becomes more difficult
Solution Approach 1:
The patent uses the suspended nanowire structure as an intermediary template that guides the growth of semiconductor layers. The nanowire's curved geometry and suspended position serve as a physical template that controls layer formation while allowing stress relaxation, thereby achieving both high mobility and controlled growth.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach results in semiconductor devices with enhanced mobility and reduced defects, improving performance metrics like on-state current and reducing off-state leakage current, thereby overcoming the limitations of existing technologies.
Implementation Method 1
growing a semiconductor layer or semiconductor layers respectively with each of the at least one nanowire as a seed layer
Data Source
AI summary
A nanowire semiconductor device having a high-quality epitaxial layer and a method of manufacturing the same are provided. According to an embodiment, the semiconductor device may include: a substrate; one or more nanowires spaced apart from the substrate, wherein the nanowires each extend along a curved longitudinal extending direction; and one or more semiconductor layers formed around peripheries of the respective nanowires to at least partially surround the respective nanowires, wherein the respective semiconductor layers around the respective nanowires are spaced apart from each other.